STMicroelectronics 2STF2220
- Part Number:
- 2STF2220
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2845819-2STF2220
- Description:
- TRANS PNP 20V 1.5A SOT-89
- ECAD Model:
-
- Datasheet:
- 2STF2220
STMicroelectronics 2STF2220 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STF2220.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation1.4W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2STF22
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic450mV @ 150mA, 1.5A
- Collector Emitter Breakdown Voltage20V
- Collector Emitter Saturation Voltage450mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Height1.6mm
- Length4.6mm
- Width2.6mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STF2220 Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 450mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 150mA, 1.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2STF2220 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 5V
2STF2220 Applications
There are a lot of STMicroelectronics
2STF2220 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 450mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 150mA, 1.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2STF2220 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 5V
2STF2220 Applications
There are a lot of STMicroelectronics
2STF2220 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STF2220 More Descriptions
Bipolar Transistors - BJT Hi gain Lo Vltg PNP Pwr transistor
Transistor Bipolar PNP 20V 1.5A SOT89
Power Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
High gain low voltage PNP power transistor
TRANSISTOR, PNP SOT-89; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:20V; Current Ic Continuous a Max:1.5A; Voltage, Vce Sat Max:0.25V; Power Dissipation:1.4W; Min Hfe:120; Case Style:SOT-89; Termination Type:SMD; Current Ic Max:1.5A; Current Ic hFE:1.5A; Power, Ptot:1.4W; Voltage, Vcbo:20V
Transistor Bipolar PNP 20V 1.5A SOT89
Power Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
High gain low voltage PNP power transistor
TRANSISTOR, PNP SOT-89; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:20V; Current Ic Continuous a Max:1.5A; Voltage, Vce Sat Max:0.25V; Power Dissipation:1.4W; Min Hfe:120; Case Style:SOT-89; Termination Type:SMD; Current Ic Max:1.5A; Current Ic hFE:1.5A; Power, Ptot:1.4W; Voltage, Vcbo:20V
The three parts on the right have similar specifications to 2STF2220.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRoHS StatusLead FreeContact PlatingTerminal PositionLifecycle StatusFactory Lead TimeTerminationFrequencyGain Bandwidth ProductCurrent - Collector (Ic) (Max)Transition FrequencyMax Junction Temperature (Tj)REACH SVHCRadiation HardeningPbfree CodeView Compare
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2STF2220Surface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)e3Obsolete3 (168 Hours)3EAR99Matte Tin (Sn)Other Transistors1.4WFLAT260not_compliant302STF223R-PSSO-F3Not Qualified1Single1.4WCOLLECTORSWITCHINGPNPPNP20V1.5A200 @ 100mA 2V100nA ICBO450mV @ 150mA, 1.5A20V450mV20V20V5V2001.6mm4.6mm2.6mmROHS3 CompliantLead Free-------------- -
Surface MountSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99-Other Transistors1.4WFLAT260not_compliantNOT SPECIFIED2STF154R-PDSO-F4Not Qualified1Single1.4WCOLLECTORSWITCHINGNPNNPN50V5A135 @ 2A 2V100nA ICBO450mV @ 300mA, 3A50V-50V50V5V----ROHS3 CompliantLead FreeTinDUAL-----------
-
Surface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)3EAR99-Other Transistors1.4WFLAT260-302STF233--1Single1.4WCOLLECTORSWITCHINGPNPPNP-60V-3A160 @ 1A 2V100nA ICBO500mV @ 150mA, 3A60V-300mV60V-60V-6V1601.6mm4.6mm2.6mmROHS3 CompliantLead FreeTin-ACTIVE (Last Updated: 8 months ago)8 WeeksSMD/SMT130MHz130MHz3A130MHz150°CNo SVHCNo-
-
Surface MountSurface MountTO-243AA-SILICON-65°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99-Other Transistors1.4WFLAT260--2STF224R-PDSO-F4-1Single1.4WCOLLECTORSWITCHINGPNPPNP80V2A140 @ 100mA 2V1mA250mV @ 100mA, 1A80V-80V80V5V----ROHS3 Compliant-TinDUAL---50MHz--50MHz--Noyes
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