STMicroelectronics 2STA1943
- Part Number:
- 2STA1943
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464421-2STA1943
- Description:
- TRANS PNP 230V 15A TO-264
- ECAD Model:
-
- Datasheet:
- 2STA1943
STMicroelectronics 2STA1943 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STA1943.
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation150W
- Frequency30MHz
- Base Part Number2STA
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product30MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)230V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A 5V
- Current - Collector Cutoff (Max)5μA ICBO
- Vce Saturation (Max) @ Ib, Ic3V @ 800mA, 8A
- Collector Emitter Breakdown Voltage230V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage3V
- Collector Base Voltage (VCBO)230V
- Emitter Base Voltage (VEBO)5V
- hFE Min80
- Height26.4mm
- Length20.2mm
- Width5.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STA1943 Overview
DC current gain in this device equals 80 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 15A volts.
2STA1943 Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2STA1943 Applications
There are a lot of STMicroelectronics
2STA1943 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 80 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 15A volts.
2STA1943 Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2STA1943 Applications
There are a lot of STMicroelectronics
2STA1943 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STA1943 More Descriptions
STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
High power PNP epitaxial planar bipolar transistor
Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
High power PNP epitaxial planar bipolar transistor
Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
The three parts on the right have similar specifications to 2STA1943.
-
ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionTerminationView Compare
-
2STA1943TinThrough HoleThrough HoleTO-264-3, TO-264AA3SILICON150°C TJTubeObsoleteNot Applicable3EAR99Other Transistors150W30MHz2STA31Single150WAMPLIFIER30MHzPNPPNP230V15A80 @ 1A 5V5μA ICBO3V @ 800mA, 8A230V30MHz3V230V5V8026.4mm20.2mm5.2mmNo SVHCNoROHS3 CompliantLead Free----------- -
-Through HoleThrough HoleTO-3P-3, SC-65-33-150°C TJTubeObsolete1 (Unlimited)---125W20MHz2STA-1Single125W-20MHz-PNP100V25A40 @ 12A 4V10μA ICBO1.5V @ 1.2A, 12A100V--100V6V40----NoROHS3 CompliantLead FreeTO-3P150°C-65°CPNP125W100V25A100V20MHz-
-
-Through HoleThrough HoleTO-3P-3, SC-65-33SILICON150°C TJTubeObsolete1 (Unlimited)3EAR99Other Transistors80W20MHz2STA31Single80WAMPLIFIER20MHzPNPPNP120V8A70 @ 3A 4V10μA ICBO1.5V @ 300mA, 3A120V20MHz-120V6V-----NoROHS3 CompliantLead Free-------120V--
-
-Through HoleThrough HoleTO-3P-3, SC-65-33SILICON150°C TJTubeObsolete1 (Unlimited)3EAR99Other Transistors200W25MHz2STA31Single200WSWITCHING25MHzPNPPNP250V17A80 @ 1A 5V5μA ICBO3V @ 800mA, 8A250V25MHz3V250V6V8018.7mm15.8mm5mmNo SVHCNoROHS3 Compliant----------Through Hole
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