STMicroelectronics 2STA1695
- Part Number:
- 2STA1695
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2848218-2STA1695
- Description:
- TRANS PNP 140V 10A TO-3P
- ECAD Model:
-
- Datasheet:
- 2STA1695
STMicroelectronics 2STA1695 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2STA1695.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight45.359237g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation100W
- Peak Reflow Temperature (Cel)260
- Frequency20MHz
- Base Part Number2STA
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation100W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product20MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 3A 4V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 700mA, 7A
- Collector Emitter Breakdown Voltage140V
- Transition Frequency20MHz
- Max Breakdown Voltage140V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)6V
- hFE Min70
- Height6.35mm
- Length50.8mm
- Width19.05mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2STA1695 Overview
In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 700mA, 7A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 140V volts is the breakdown voltage.Maximum collector currents can be below 10A volts.
2STA1695 Features
the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 700mV @ 700mA, 7A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
2STA1695 Applications
There are a lot of STMicroelectronics
2STA1695 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 700mA, 7A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 140V volts is the breakdown voltage.Maximum collector currents can be below 10A volts.
2STA1695 Features
the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 700mV @ 700mA, 7A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
2STA1695 Applications
There are a lot of STMicroelectronics
2STA1695 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2STA1695 More Descriptions
STMICROELECTRONICS 2STA1695Bipolar (BJT) Single Transistor, PNP, 140 V, 20 MHz, 100 W, 7 A, 70
High power PNP epitaxial planar bipolar transistor
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
Trans GP BJT PNP 140V 10A 3-Pin(3 Tab) TO-3P Tube
Transistor, PNP TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:20MHz; Power Dissipation Pd:100W; DC
TRANSISTOR, PNP TO-3P; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 140V; Transition Frequency ft: 20MHz; Power Dissipation Pd: 100W; DC Collector Current: 7A; DC Current Gain hFE: 70hFE; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 10A; Current Ic Continuous a Max: 7A; Current Ic hFE: 3A; Gain Bandwidth ft Typ: 20MHz; Hfe Min: 70; Power Dissipation Ptot Max: 100W; Termination Type: Through Hole; Voltage Vcbo: 140V
High power PNP epitaxial planar bipolar transistor
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
Trans GP BJT PNP 140V 10A 3-Pin(3 Tab) TO-3P Tube
Transistor, PNP TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:20MHz; Power Dissipation Pd:100W; DC
TRANSISTOR, PNP TO-3P; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 140V; Transition Frequency ft: 20MHz; Power Dissipation Pd: 100W; DC Collector Current: 7A; DC Current Gain hFE: 70hFE; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 10A; Current Ic Continuous a Max: 7A; Current Ic hFE: 3A; Gain Bandwidth ft Typ: 20MHz; Hfe Min: 70; Power Dissipation Ptot Max: 100W; Termination Type: Through Hole; Voltage Vcbo: 140V
The three parts on the right have similar specifications to 2STA1695.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)FrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingCollector Emitter Saturation VoltagePower - MaxView Compare
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2STA1695Through HoleThrough HoleTO-3P-3, SC-65-3345.359237gSILICON150°C TJTubee3ObsoleteNot Applicable3EAR99Matte Tin (Sn)Other Transistors100W26020MHz2STA31Single100WAMPLIFIER20MHzPNPPNP140V10A70 @ 3A 4V100nA ICBO700mV @ 700mA, 7A140V20MHz140V140V6V706.35mm50.8mm19.05mmNo SVHCNoROHS3 CompliantLead Free---- -
Through HoleThrough HoleTO-264-3, TO-264AA3-SILICON150°C TJTube-ObsoleteNot Applicable3EAR99-Other Transistors150W-30MHz2STA31Single150WAMPLIFIER30MHzPNPPNP230V15A80 @ 1A 5V5μA ICBO3V @ 800mA, 8A230V30MHz-230V5V8026.4mm20.2mm5.2mmNo SVHCNoROHS3 CompliantLead FreeTin3V-
-
Through HoleThrough HoleTO-3P-3, SC-65-33-SILICON150°C TJTube-Obsolete1 (Unlimited)3EAR99-Other Transistors80W-20MHz2STA31Single80WAMPLIFIER20MHzPNPPNP120V8A70 @ 3A 4V10μA ICBO1.5V @ 300mA, 3A120V20MHz120V120V6V-----NoROHS3 CompliantLead Free---
-
Through HoleThrough HoleTO-3P-3, SC-65-33-SILICON150°C TJTube-Obsolete1 (Unlimited)3EAR99-Other Transistors130W-30MHz2STA31Single130WSWITCHING30MHzPNPPNP230V15A80 @ 1A 5V5μA ICBO3V @ 800mA, 8A230V30MHz230V230V5V8018.7mm15.8mm5mmNo SVHCNoROHS3 CompliantLead Free-3V150W
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