Rohm Semiconductor 2SK3018T106
- Part Number:
- 2SK3018T106
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2480895-2SK3018T106
- Description:
- MOSFET N-CH 30V .1A SOT-323
- Datasheet:
- 2SK3018
Rohm Semiconductor 2SK3018T106 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SK3018T106.
- Factory Lead Time18 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance13Ohm
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- Number of Elements1
- Power Dissipation-Max200mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8 Ω @ 10mA, 4V
- Vgs(th) (Max) @ Id1.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds13pF @ 5V
- Current - Continuous Drain (Id) @ 25°C100mA Ta
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4V
- Vgs (Max)±20V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)100mA
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.1A
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Nominal Vgs1.5 V
- Height800μm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SK3018T106 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13pF @ 5V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.1A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.
2SK3018T106 Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
a threshold voltage of 1.5V
2SK3018T106 Applications
There are a lot of ROHM Semiconductor
2SK3018T106 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13pF @ 5V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.1A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.
2SK3018T106 Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
a threshold voltage of 1.5V
2SK3018T106 Applications
There are a lot of ROHM Semiconductor
2SK3018T106 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
2SK3018T106 More Descriptions
Single N-Channel 200 mW 30 V 13 Ohm Surface Mount MosFet - UMT-3
ROHM 2SK3018T106 N-channel MOSFET Transistor, 0.1 A, 30 V, 3-Pin UMT | ROHM Semiconductor 2SK3018T106
TRANSISTOR SWITCHING MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 100mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 4V
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8 Ω @ 10mA, 4V 100mA Ta 150°C TJ MOSFET N-CH 30V .1A SOT-323
ROHM 2SK3018T106 N-channel MOSFET Transistor, 0.1 A, 30 V, 3-Pin UMT | ROHM Semiconductor 2SK3018T106
TRANSISTOR SWITCHING MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 100mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 4V
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8 Ω @ 10mA, 4V 100mA Ta 150°C TJ MOSFET N-CH 30V .1A SOT-323
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