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2N6804

Microsemi Corporation 2N6804

Part Number:
2N6804
Manufacturer:
Microsemi Corporation
Ventron No:
2491683-2N6804
Description:
MOSFET P-CH 100V TO-204AA TO-3
ECAD Model:
Datasheet:
2N6804

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Specifications
Microsemi Corporation 2N6804 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6804.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    4W Ta 75W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    360m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Rise Time
    140ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    11A
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    100V
  • RoHS Status
    Non-RoHS Compliant
Description
2N6804 Overview
This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

2N6804 Features
a continuous drain current (ID) of 11A
a 100V drain to source voltage (Vdss)


2N6804 Applications
There are a lot of Microsemi Corporation
2N6804 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
2N6804 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package
Trans MOSFET P-CH 100V 11A 3-Pin(2 Tab) TO-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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