Microsemi Corporation 2N6790
- Part Number:
- 2N6790
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2853202-2N6790
- Description:
- MOSFET N-CH 200V TO-205AF
- ECAD Model:
-
- Datasheet:
- 2N6790
Microsemi Corporation 2N6790 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6790.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AF Metal Can
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1997
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Reach Compliance Codenot_compliant
- JESD-30 CodeO-MBCY-W3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max800mW Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs800m Ω @ 2.25A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C3.5A Tc
- Gate Charge (Qg) (Max) @ Vgs14.3nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)3.5A
- Drain-source On Resistance-Max0.85Ohm
- Pulsed Drain Current-Max (IDM)14A
- DS Breakdown Voltage-Min200V
- RoHS StatusNon-RoHS Compliant
2N6790 Overview
This device conducts a continuous drain current (ID) of 3.5A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 14A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
2N6790 Features
a continuous drain current (ID) of 3.5A
based on its rated peak drain current 14A.
a 200V drain to source voltage (Vdss)
2N6790 Applications
There are a lot of Microsemi Corporation
2N6790 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
This device conducts a continuous drain current (ID) of 3.5A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 14A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
2N6790 Features
a continuous drain current (ID) of 3.5A
based on its rated peak drain current 14A.
a 200V drain to source voltage (Vdss)
2N6790 Applications
There are a lot of Microsemi Corporation
2N6790 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
2N6790 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39
HEXFET, Hi-Rel 200V, 3.5A, 0.80 ohm
French Electronic Distributor since 1988
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39
HEXFET, Hi-Rel 200V, 3.5A, 0.80 ohm
French Electronic Distributor since 1988
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