2N6760

Microsemi Corporation 2N6760

Part Number:
2N6760
Manufacturer:
Microsemi Corporation
Ventron No:
3586857-2N6760
Description:
MOSFET N-CH 400V TO-3
ECAD Model:
Datasheet:
2N6760

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Specifications
Microsemi Corporation 2N6760 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6760.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    4W Ta 75W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.22 Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    5.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Rise Time
    40ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    5.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    22A
  • DS Breakdown Voltage-Min
    400V
  • RoHS Status
    Non-RoHS Compliant
Description
2N6760 Overview
This device has a continuous drain current (ID) of [5.5A], which is its maximum continuous current.A maximum pulsed drain current of 22A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 400V.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

2N6760 Features
a continuous drain current (ID) of 5.5A
based on its rated peak drain current 22A.
a 400V drain to source voltage (Vdss)


2N6760 Applications
There are a lot of Microsemi Corporation
2N6760 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
2N6760 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2Infineon SCT
Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) TO-204AA
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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