Fairchild/ON Semiconductor 2N5459
- Part Number:
- 2N5459
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854945-2N5459
- Description:
- JFET N-CH 25V 625MW TO92
- ECAD Model:
-
- Datasheet:
- 2N5457-59, MMBF5457-59
Fairchild/ON Semiconductor 2N5459 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5459.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight201mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Voltage - Rated DC25V
- Max Power Dissipation625mW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating10mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part Number2N5459
- Element ConfigurationSingle
- Power Dissipation625mW
- FET TypeN-Channel
- Input Capacitance (Ciss) (Max) @ Vds7pF @ 15V
- Breakdown Voltage25V
- Drain to Source Voltage (Vdss)15V
- Continuous Drain Current (ID)16mA
- Gate to Source Voltage (Vgs)-25V
- Current - Drain (Idss) @ Vds (Vgs=0)4mA @ 15V
- Voltage - Cutoff (VGS off) @ Id2V @ 10nA
- Height4.7mm
- Length4.7mm
- Width3.93mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N5459 Description
This device is a low-level audio amplifier and switching transistors, and can be used for analog switching applications.
2N5459 More Descriptions
JFET N-CH 25V 625MW TO92
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss:4mA to 16mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:16mA; Current Idss Min:4mA; Package / Case:TO-92; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:16mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss:4mA to 16mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:16mA; Current Idss Min:4mA; Package / Case:TO-92; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:16mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2N5459.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationPower DissipationFET TypeInput Capacitance (Ciss) (Max) @ VdsBreakdown VoltageDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdHeightLengthWidthREACH SVHCRoHS StatusLead FreeVoltage - Cutoff (VGS off) @ Id:Voltage - Breakdown (V(BR)GSS):Supplier Device Package:Series:Resistance - RDS(On):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:FET Type:Drain to Source Voltage (Vdss):Current - Drain (Idss) @ Vds (Vgs=0):View Compare
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2N5459Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3201mg-55°C~150°C TJBulk2000Obsolete1 (Unlimited)Through Hole25V625mWNOT SPECIFIED10mANOT SPECIFIED2N5459Single625mWN-Channel7pF @ 15V25V15V16mA-25V4mA @ 15V2V @ 10nA4.7mm4.7mm3.93mmNo SVHCRoHS CompliantLead Free--------------- -
---------------------------------1V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-2mA @ 15V
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---------------------------------500mV @ 10nA25VTO-92-3--625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VN-Channel-1mA @ 15V
-
---------------------------------1.8V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-4mA @ 15V
-
CP210-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
-
CP232V-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
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