Fairchild/ON Semiconductor 2N5457
- Part Number:
- 2N5457
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3072127-2N5457
- Description:
- JFET N-CH 25V 625MW TO92
- ECAD Model:
-
- Datasheet:
- 2N5457
Fairchild/ON Semiconductor 2N5457 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5457.
- Voltage - Cutoff (VGS off) @ Id:500mV @ 10nA
- Voltage - Breakdown (V(BR)GSS):25V
- Supplier Device Package:TO-92-3
- Series:-
- Resistance - RDS(On):-
- Power - Max:625mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
- FET Type:N-Channel
- Drain to Source Voltage (Vdss):-
- Current - Drain (Idss) @ Vds (Vgs=0):1mA @ 15V
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2N5457 More Descriptions
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-92
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, 25V, TO-92; Drain Source Voltage Vds: -; Continuous Drain Current Id: 5mA; Power Dissipation Pd: 625mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gate-source Voltage: -25V; Noise Figure Typ: 3dB; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 625mW; Termination Type: Through Hole; Transistor Case Style: TO-92; Transistor Polarity: N Channel; Voltage Vds: 15V
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, 25V, TO-92; Drain Source Voltage Vds: -; Continuous Drain Current Id: 5mA; Power Dissipation Pd: 625mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gate-source Voltage: -25V; Noise Figure Typ: 3dB; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 625mW; Termination Type: Through Hole; Transistor Case Style: TO-92; Transistor Polarity: N Channel; Voltage Vds: 15V
The three parts on the right have similar specifications to 2N5457.
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ImagePart NumberManufacturerVoltage - Cutoff (VGS off) @ Id:Voltage - Breakdown (V(BR)GSS):Supplier Device Package:Series:Resistance - RDS(On):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:FET Type:Drain to Source Voltage (Vdss):Current - Drain (Idss) @ Vds (Vgs=0):Part StatusView Compare
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2N5457500mV @ 10nA25VTO-92-3--625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VN-Channel-1mA @ 15V-- -
--------------Active
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1V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-2mA @ 15V-
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1.8V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-4mA @ 15V-
-
CP210-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
-
CP232V-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
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