Fairchild/ON Semiconductor 2N5461
- Part Number:
- 2N5461
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3587404-2N5461
- Description:
- JFET P-CH 40V 0.35W TO92
- ECAD Model:
-
- Datasheet:
- 2N5460,1,2
Fairchild/ON Semiconductor 2N5461 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5461.
- Voltage - Cutoff (VGS off) @ Id:1V @ 1µA
- Voltage - Breakdown (V(BR)GSS):40V
- Supplier Device Package:TO-92-3
- Series:-
- Resistance - RDS(On):-
- Power - Max:350mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
- FET Type:P-Channel
- Drain to Source Voltage (Vdss):-
- Current - Drain (Idss) @ Vds (Vgs=0):2mA @ 15V
part No. 2N5461 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
2N5461 More Descriptions
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
Trans JFET P-CH 3-Pin TO-92 Box / JFET P-CH 40V 0.35W TO92
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
TRANSISTOR JFET POLARITY P; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss:-2mA to -9mA; Gate-Source Cutoff Voltage Vgs(off) Max:7.5V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:9mA; Current Idss Min:2mA; Current Ig:10mA; Device Marking:2N5461; Drain Source Voltage Vds:40V; No. of Transistors:1; Package / Case:TO-92; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:P Channel
Trans JFET P-CH 3-Pin TO-92 Box / JFET P-CH 40V 0.35W TO92
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
TRANSISTOR JFET POLARITY P; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss:-2mA to -9mA; Gate-Source Cutoff Voltage Vgs(off) Max:7.5V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:9mA; Current Idss Min:2mA; Current Ig:10mA; Device Marking:2N5461; Drain Source Voltage Vds:40V; No. of Transistors:1; Package / Case:TO-92; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:P Channel
The three parts on the right have similar specifications to 2N5461.
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ImagePart NumberManufacturerVoltage - Cutoff (VGS off) @ Id:Voltage - Breakdown (V(BR)GSS):Supplier Device Package:Series:Resistance - RDS(On):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:FET Type:Drain to Source Voltage (Vdss):Current - Drain (Idss) @ Vds (Vgs=0):Part StatusView Compare
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2N54611V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-2mA @ 15V-- -
--------------Active
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500mV @ 10nA25VTO-92-3--625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VN-Channel-1mA @ 15V-
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1.8V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-4mA @ 15V-
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CP210-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
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CP232V-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
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