Fairchild/ON Semiconductor 2N5462
- Part Number:
- 2N5462
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3072123-2N5462
- Description:
- JFET P-CH 40V 0.35W TO92
- Datasheet:
- 2N5462
Fairchild/ON Semiconductor 2N5462 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5462.
- Voltage - Cutoff (VGS off) @ Id:1.8V @ 1µA
- Voltage - Breakdown (V(BR)GSS):40V
- Supplier Device Package:TO-92-3
- Series:-
- Resistance - RDS(On):-
- Power - Max:350mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
- FET Type:P-Channel
- Drain to Source Voltage (Vdss):-
- Current - Drain (Idss) @ Vds (Vgs=0):4mA @ 15V
part#2N5462, Manufacturer:Fairchild/ON Semiconductor is available at ventronchip.com, see description of 2N5462 as below .use the request quote form to request 2N5462 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for 2N5462 depending on the quantity required, availability and warehouse location.
2N5462 More Descriptions
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
JFET; Transistor Polarity:P Channel; Breakdown Voltage, V(br)gss:40V; Zero Gate Voltage Drain Current Min, Idss:-4mA; Zero Gate Voltage Drain Current Max, Idss:-16mA; Gate-Source Cutoff Voltage Max, Vgs(off):9V; Package/Case:3-TO-92 ;RoHS Compliant: Yes
TRANSISTOR, JFET, P, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss:-4mA to -16mA; Gate-Source Cutoff Voltage Vgs(off) Max:9V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:LNA; Current Idss Max:16mA; Current Idss Min:4mA; Current Ig:16mA; Device Marking:2N5462; Drain Source Voltage Vds:40V; Forward Transconductance Gfs Max:6mA/V; Full Power Rating Temperature:25°C; Gfs Min:2mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:n; Pin Format:n; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:310mW; Termination Type:Through Hole; Transistor Polarity:P Channel
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
JFET; Transistor Polarity:P Channel; Breakdown Voltage, V(br)gss:40V; Zero Gate Voltage Drain Current Min, Idss:-4mA; Zero Gate Voltage Drain Current Max, Idss:-16mA; Gate-Source Cutoff Voltage Max, Vgs(off):9V; Package/Case:3-TO-92 ;RoHS Compliant: Yes
TRANSISTOR, JFET, P, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss:-4mA to -16mA; Gate-Source Cutoff Voltage Vgs(off) Max:9V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:LNA; Current Idss Max:16mA; Current Idss Min:4mA; Current Ig:16mA; Device Marking:2N5462; Drain Source Voltage Vds:40V; Forward Transconductance Gfs Max:6mA/V; Full Power Rating Temperature:25°C; Gfs Min:2mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:n; Pin Format:n; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:310mW; Termination Type:Through Hole; Transistor Polarity:P Channel
The three parts on the right have similar specifications to 2N5462.
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ImagePart NumberManufacturerVoltage - Cutoff (VGS off) @ Id:Voltage - Breakdown (V(BR)GSS):Supplier Device Package:Series:Resistance - RDS(On):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:FET Type:Drain to Source Voltage (Vdss):Current - Drain (Idss) @ Vds (Vgs=0):Part StatusView Compare
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2N54621.8V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-4mA @ 15V--
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--------------Active
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1V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-2mA @ 15V-
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500mV @ 10nA25VTO-92-3--625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VN-Channel-1mA @ 15V-
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