Diodes Incorporated 2DB1694-7
- Part Number:
- 2DB1694-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464853-2DB1694-7
- Description:
- TRANS PNP 30V 1A SOT-323
- Datasheet:
- 2DB1694
Diodes Incorporated 2DB1694-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DB1694-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2DB1694
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic380mV @ 25mA, 500mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage-380mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)-6V
- hFE Min270
- Height1mm
- Length2.15mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
2DB1694-7 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -380mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 380mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
2DB1694-7 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -380mV
the vce saturation(Max) is 380mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2DB1694-7 Applications
There are a lot of Diodes Incorporated
2DB1694-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -380mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 380mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
2DB1694-7 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -380mV
the vce saturation(Max) is 380mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2DB1694-7 Applications
There are a lot of Diodes Incorporated
2DB1694-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DB1694-7 More Descriptions
DIODES INC. 2DB1694-7 Bipolar (BJT) Single Transistor, PNP, 30 V, 300 MHz, 300 mW, 500 mA, 270 hFE
Low VCE(sat) PNP Transistor SOT-323 | Diodes Inc 2DB1694-7
TRANSISTOR, PNP, SOT323, 0.3W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-323; No. of Pins:3; Collector Emitter Voltage Vces:380mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:270; Package / Case:SOT-323; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
Low VCE(sat) PNP Transistor SOT-323 | Diodes Inc 2DB1694-7
TRANSISTOR, PNP, SOT323, 0.3W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-323; No. of Pins:3; Collector Emitter Voltage Vces:380mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:270; Package / Case:SOT-323; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
The three parts on the right have similar specifications to 2DB1694-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusJESD-30 CodeCase ConnectionContact PlatingLead FreeView Compare
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2DB1694-715 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn)Other Transistors500mWDUALGULL WING260300MHz402DB169431Single500mW300mWSWITCHING300MHzPNPPNP30V1A270 @ 100mA 2V100nA ICBO380mV @ 25mA, 500mA30V300MHz-380mV30V30V-6V2701mm2.15mm1.3mmNo SVHCNoROHS3 Compliant-----
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19 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn)Other Transistors1W-FLAT260120MHz402DB118841Single1W-SWITCHING120MHzPNPPNP32V2A120 @ 500mA 3V100nA ICBO800mV @ 200mA, 2A32V120MHz-800mV32V40V-5V-1.5mm4.5mm2.48mmNo SVHCNoROHS3 CompliantR-PSSO-F3COLLECTOR--
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3-EAR99-Other Transistors1W-FLAT260120MHz402DB118841Single1W-SWITCHING120MHzPNPPNP32V2A180 @ 500mA 3V100nA ICBO800mV @ 200mA, 2A32V120MHz800mV32V40V6V1801.5mm4.5mm2.48mmNo SVHCNoROHS3 CompliantR-PSSO-F3COLLECTORTinLead Free
-
7 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn)Other Transistors1W-FLAT260120MHz402DB118841Single1W-SWITCHING120MHzPNPPNP32V2A82 @ 500mA 3V100nA ICBO800mV @ 200mA, 2A32V120MHz-32V40V5V821.5mm4.5mm2.48mmNo SVHCNoROHS3 CompliantR-PSSO-F3COLLECTOR--
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