2DB1694-7

Diodes Incorporated 2DB1694-7

Part Number:
2DB1694-7
Manufacturer:
Diodes Incorporated
Ventron No:
2464853-2DB1694-7
Description:
TRANS PNP 30V 1A SOT-323
ECAD Model:
Datasheet:
2DB1694

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Comments
Specifications
Diodes Incorporated 2DB1694-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DB1694-7.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Weight
    6.010099mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2DB1694
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    500mW
  • Power - Max
    300mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    270 @ 100mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    380mV @ 25mA, 500mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    -380mV
  • Max Breakdown Voltage
    30V
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    270
  • Height
    1mm
  • Length
    2.15mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
2DB1694-7 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -380mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 380mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

2DB1694-7 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -380mV
the vce saturation(Max) is 380mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz


2DB1694-7 Applications
There are a lot of Diodes Incorporated
2DB1694-7 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2DB1694-7 More Descriptions
DIODES INC. 2DB1694-7 Bipolar (BJT) Single Transistor, PNP, 30 V, 300 MHz, 300 mW, 500 mA, 270 hFE
Low VCE(sat) PNP Transistor SOT-323 | Diodes Inc 2DB1694-7
TRANSISTOR, PNP, SOT323, 0.3W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-323; No. of Pins:3; Collector Emitter Voltage Vces:380mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:270; Package / Case:SOT-323; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
Product Comparison
The three parts on the right have similar specifications to 2DB1694-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    JESD-30 Code
    Case Connection
    Contact Plating
    Lead Free
    View Compare
  • 2DB1694-7
    2DB1694-7
    15 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    6.010099mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    Matte Tin (Sn)
    Other Transistors
    500mW
    DUAL
    GULL WING
    260
    300MHz
    40
    2DB1694
    3
    1
    Single
    500mW
    300mW
    SWITCHING
    300MHz
    PNP
    PNP
    30V
    1A
    270 @ 100mA 2V
    100nA ICBO
    380mV @ 25mA, 500mA
    30V
    300MHz
    -380mV
    30V
    30V
    -6V
    270
    1mm
    2.15mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • 2DB1188Q-13
    19 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    -
    FLAT
    260
    120MHz
    40
    2DB1188
    4
    1
    Single
    1W
    -
    SWITCHING
    120MHz
    PNP
    PNP
    32V
    2A
    120 @ 500mA 3V
    100nA ICBO
    800mV @ 200mA, 2A
    32V
    120MHz
    -800mV
    32V
    40V
    -5V
    -
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    R-PSSO-F3
    COLLECTOR
    -
    -
  • 2DB1188R-13
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    Other Transistors
    1W
    -
    FLAT
    260
    120MHz
    40
    2DB1188
    4
    1
    Single
    1W
    -
    SWITCHING
    120MHz
    PNP
    PNP
    32V
    2A
    180 @ 500mA 3V
    100nA ICBO
    800mV @ 200mA, 2A
    32V
    120MHz
    800mV
    32V
    40V
    6V
    180
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    R-PSSO-F3
    COLLECTOR
    Tin
    Lead Free
  • 2DB1188P-13
    7 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    -
    FLAT
    260
    120MHz
    40
    2DB1188
    4
    1
    Single
    1W
    -
    SWITCHING
    120MHz
    PNP
    PNP
    32V
    2A
    82 @ 500mA 3V
    100nA ICBO
    800mV @ 200mA, 2A
    32V
    120MHz
    -
    32V
    40V
    5V
    82
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    R-PSSO-F3
    COLLECTOR
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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