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2DB1132Q-13

Diodes Incorporated 2DB1132Q-13

Part Number:
2DB1132Q-13
Manufacturer:
Diodes Incorporated
Ventron No:
2467075-2DB1132Q-13
Description:
TRANS PNP 32V 1A SOT89-3
ECAD Model:
Datasheet:
2DB1132Q-13

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Specifications
Diodes Incorporated 2DB1132Q-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DB1132Q-13.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Supplier Device Package
    SOT-89-3
  • Weight
    51.993025mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    1W
  • Frequency
    190MHz
  • Base Part Number
    2DB1132
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    1W
  • Power - Max
    1W
  • Gain Bandwidth Product
    190MHz
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    32V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 100mA 3V
  • Current - Collector Cutoff (Max)
    500nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    32V
  • Voltage - Collector Emitter Breakdown (Max)
    32V
  • Current - Collector (Ic) (Max)
    1A
  • Collector Emitter Saturation Voltage
    -125mV
  • Max Breakdown Voltage
    32V
  • Frequency - Transition
    190MHz
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    -5V
  • Height
    1.5mm
  • Length
    4.5mm
  • Width
    2.48mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
2DB1132Q-13 Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -125mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.As a result, it can handle voltages as low as 32V volts.Single BJT transistor comes in a supplier device package of SOT-89-3.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.The maximum collector current is 1A volts.

2DB1132Q-13 Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the supplier device package of SOT-89-3


2DB1132Q-13 Applications
There are a lot of Diodes Incorporated
2DB1132Q-13 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2DB1132Q-13 More Descriptions
Trans GP BJT PNP 32V 1A 2000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
PNP, 32V, 1A, SOT89,190MHzDiodes Inc SCT
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to 2DB1132Q-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Frequency
    Base Part Number
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Power - Max
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transition Frequency
    Lead Free
    Termination
    Terminal Position
    hFE Min
    View Compare
  • 2DB1132Q-13
    2DB1132Q-13
    Diodes Incorporated
    19 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    SOT-89-3
    51.993025mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    150°C
    -55°C
    1W
    190MHz
    2DB1132
    1
    PNP
    Single
    1W
    1W
    190MHz
    PNP
    32V
    1A
    120 @ 100mA 3V
    500nA ICBO
    500mV @ 50mA, 500mA
    32V
    32V
    1A
    -125mV
    32V
    190MHz
    40V
    -5V
    1.5mm
    4.5mm
    2.48mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2DB1119S-13
    2DB1119S-13
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    -
    51.993025mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    Active
    1 (Unlimited)
    -
    -
    1W
    200MHz
    -
    1
    -
    Single
    1W
    -
    200MHz
    PNP
    25V
    1A
    140 @ 50mA 2V
    100nA ICBO
    700mV @ 50mA, 500mA
    25V
    -
    -
    -
    -
    -
    25V
    5V
    1.5mm
    4.5mm
    2.5mm
    No SVHC
    No
    ROHS3 Compliant
    SILICON
    e3
    yes
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    FLAT
    260
    40
    4
    R-PSSO-F3
    COLLECTOR
    SWITCHING
    PNP
    200MHz
    -
    -
    -
    -
    2DB1132Q-13 vs 2DB1119S-13
  • 2DB1714-13
    2DB1714-13
    Diodes Incorporated
    9 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    -
    51.993025mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Active
    1 (Unlimited)
    -
    -
    900mW
    200MHz
    -
    1
    -
    Single
    2W
    900mW
    200MHz
    PNP
    30V
    2A
    270 @ 200mA 2V
    100nA ICBO
    370mV @ 75mA, 1.5A
    30V
    -
    -
    -370mV
    30V
    -
    30V
    6V
    1.4mm
    4.5mm
    2.5mm
    No SVHC
    No
    ROHS3 Compliant
    SILICON
    e3
    yes
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    FLAT
    260
    40
    3
    R-PSSO-F3
    COLLECTOR
    SWITCHING
    PNP
    200MHz
    Lead Free
    -
    -
    -
    2DB1132Q-13 vs 2DB1714-13
  • 2DB1694-7
    2DB1694-7
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    -
    6.010099mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Active
    1 (Unlimited)
    -
    -
    500mW
    300MHz
    2DB1694
    1
    -
    Single
    500mW
    300mW
    300MHz
    PNP
    30V
    1A
    270 @ 100mA 2V
    100nA ICBO
    380mV @ 25mA, 500mA
    30V
    -
    -
    -380mV
    30V
    -
    30V
    -6V
    1mm
    2.15mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    SILICON
    e3
    yes
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    GULL WING
    260
    40
    3
    -
    -
    SWITCHING
    PNP
    300MHz
    -
    SMD/SMT
    DUAL
    270
    2DB1132Q-13 vs 2DB1694-7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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