Diodes Incorporated 2DB1689-7
- Part Number:
- 2DB1689-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068960-2DB1689-7
- Description:
- TRANS PNP 12V 1.5A SOT-323
- ECAD Model:
-
- Datasheet:
- 2DB1689-7
Diodes Incorporated 2DB1689-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DB1689-7.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 200mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 25mA, 500mA
- Collector Emitter Breakdown Voltage12V
- Transition Frequency300MHz
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)15V
- Emitter Base Voltage (VEBO)6V
- hFE Min270
- Height1mm
- Length2.15mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2DB1689-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.When VCE saturation is 200mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2DB1689-7 Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
2DB1689-7 Applications
There are a lot of Diodes Incorporated
2DB1689-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.When VCE saturation is 200mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2DB1689-7 Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
2DB1689-7 Applications
There are a lot of Diodes Incorporated
2DB1689-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DB1689-7 More Descriptions
DIODES INC. 2DB1689-7 Bipolar (BJT) Single Transistor, PNP, 12 V, 300 MHz, 300 mW, 500 mA, 270 hFE
2DB1689 Series 12 V 1.5 A 300 mW PNP Surface Mount Transistor - SOT-323
Transistor, PNP, SOT323, 0.3W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:300MHz; Power Dissipation
Transistor, Pnp, 12V, 500Ma, 300Mw, Sot-323; Transistor Polarity:Pnp; Collector Emitter Voltage Max:12V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. 2DB1689-7
TRANSISTOR, PNP, SOT323, 0.3W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 270; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)
2DB1689 Series 12 V 1.5 A 300 mW PNP Surface Mount Transistor - SOT-323
Transistor, PNP, SOT323, 0.3W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:300MHz; Power Dissipation
Transistor, Pnp, 12V, 500Ma, 300Mw, Sot-323; Transistor Polarity:Pnp; Collector Emitter Voltage Max:12V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. 2DB1689-7
TRANSISTOR, PNP, SOT323, 0.3W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 270; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)
The three parts on the right have similar specifications to 2DB1689-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureBase Part NumberPolarityVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageFrequency - TransitionJESD-30 CodeCase ConnectionView Compare
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2DB1689-716 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn)Other Transistors300mWDUALGULL WING260300MHz4031Single500mW300mWSWITCHING300MHzPNPPNP12V1.5A270 @ 200mA 2V100nA ICBO200mV @ 25mA, 500mA12V300MHz12V15V6V2701mm2.15mm1.3mmNo SVHCNoROHS3 CompliantLead Free------------ -
19 WeeksSurface MountSurface MountTO-243AA451.993025mg--55°C~150°C TJTape & Reel (TR)2011--Active1 (Unlimited)-----1W---190MHz--1Single1W1W-190MHz-PNP32V1A120 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA32V-32V40V-5V-1.5mm4.5mm2.48mmNo SVHCNoROHS3 Compliant-SOT-89-3150°C-55°C2DB1132PNP32V1A-125mV190MHz--
-
7 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn)Other Transistors1W-FLAT260120MHz4041Single1W-SWITCHING120MHzPNPPNP32V2A82 @ 500mA 3V100nA ICBO800mV @ 200mA, 2A32V120MHz32V40V5V821.5mm4.5mm2.48mmNo SVHCNoROHS3 Compliant----2DB1188-----R-PSSO-F3COLLECTOR
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13 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn)Other Transistors900mW-FLAT260180MHz4031Single2W900mWSWITCHING180MHzPNPPNP12V3A270 @ 500mA 2V100nA ICBO250mV @ 30mA, 1.5A12V180MHz12V15V6V2701.5mm4.5mm2.5mmNo SVHCNoROHS3 Compliant----2DB1713----250mV-R-PSSO-F3COLLECTOR
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