Diodes Incorporated 2DB1119S-13
- Part Number:
- 2DB1119S-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846510-2DB1119S-13
- Description:
- TRANS PNP 25V 1A SOT89-3
- ECAD Model:
-
- Datasheet:
- 2DB1119S-13
Diodes Incorporated 2DB1119S-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DB1119S-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 50mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)25V
- Emitter Base Voltage (VEBO)5V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
2DB1119S-13 Overview
DC current gain in this device equals 140 @ 50mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 1A volts.
2DB1119S-13 Features
the DC current gain for this device is 140 @ 50mA 2V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
2DB1119S-13 Applications
There are a lot of Diodes Incorporated
2DB1119S-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 140 @ 50mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 1A volts.
2DB1119S-13 Features
the DC current gain for this device is 140 @ 50mA 2V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
2DB1119S-13 Applications
There are a lot of Diodes Incorporated
2DB1119S-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DB1119S-13 More Descriptions
Trans GP BJT PNP 25V 1A 4-Pin(3 Tab) SOT-89 T/R
PNP, 25V, 1A, SOT89, 200MHzDiodes Inc SCT
PNP, 25V, 1A, SOT89, 200MHzDiodes Inc SCT
The three parts on the right have similar specifications to 2DB1119S-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusContact PlatingAdditional FeatureBase Part NumberCollector Emitter Saturation VoltageMax Breakdown VoltageLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTerminationTerminal PositionhFE MinView Compare
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2DB1119S-1315 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors1WFLAT260200MHz404R-PSSO-F31Single1WCOLLECTORSWITCHING200MHzPNPPNP25V1A140 @ 50mA 2V100nA ICBO700mV @ 50mA, 500mA25V200MHz25V5V1.5mm4.5mm2.5mmNo SVHCNoROHS3 Compliant------------------ -
13 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)2EAR99-Other Transistors10WGULL WING260110MHz40-R-PSSO-G21Single10WCOLLECTORSWITCHING110MHzPNPPNP32V2A120 @ 500mA 3V1μA ICBO800mV @ 200mA, 2A32V110MHz40V5V---No SVHCNoROHS3 CompliantTinHIGH RELIABILITY2DB1182-800mV32VLead Free-----------
-
19 WeeksSurface MountSurface MountTO-243AA451.993025mg--55°C~150°C TJTape & Reel (TR)2011--Active1 (Unlimited)----1W--190MHz---1Single1W--190MHz-PNP32V1A120 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA32V-40V-5V1.5mm4.5mm2.48mmNo SVHCNoROHS3 Compliant--2DB1132-125mV32V-SOT-89-3150°C-55°CPNP1W32V1A190MHz---
-
15 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors500mWGULL WING260300MHz403-1Single500mW-SWITCHING300MHzPNPPNP30V1A270 @ 100mA 2V100nA ICBO380mV @ 25mA, 500mA30V300MHz30V-6V1mm2.15mm1.3mmNo SVHCNoROHS3 Compliant--2DB1694-380mV30V-----300mW---SMD/SMTDUAL270
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