Diodes Incorporated ZXMN6A25K

Name: ZXMN6A25K
Brand: Diodes Incorporated
SKU: 2490100-ZXMN6A25K
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: ZXMN6A25K

Manufacturer:: Diodes Incorporated

Ventron No:: 2490100-ZXMN6A25K

Description:: MOSFET N-CH 60V 7A DPAK

ECAD Model:

Datasheet:: ZXMN6A25K

Specifications

Diodes Incorporated ZXMN6A25K technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A25K.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
10.7A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.11W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
20.4nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
7A
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.05Ohm
Pulsed Drain Current-Max (IDM)
36A
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

ZXMN6A25K Overview
A device's maximal input capacitance is 1063pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 36A, which is its maximum rated peak drain current.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

ZXMN6A25K Features
a continuous drain current (ID) of 7A
based on its rated peak drain current 36A.

ZXMN6A25K Applications
There are a lot of Diodes Incorporated
ZXMN6A25K applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

ZXMN6A25K More Descriptions

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFETCiiva Crawler
MOSFET N-CH 60V 7A TO252-3
MOSFET N-CHAN 60V DPAK

Product Comparison

The three parts on the right have similar specifications to ZXMN6A25K.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

REACH SVHC

RoHS Status

Lead Free

Factory Lead Time

Number of Pins

Weight

Resistance

Additional Feature

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Surface Mount

Subcategory

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
ZXMN6A25K

Diodes Incorporated

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

no

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

60V

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

10.7A

40

3

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.11W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

50m Ω @ 3.6A, 10V

3V @ 250μA

1063pF @ 30V

7A Ta

20.4nC @ 10V

4ns

4.5V 10V

±20V

7A

7A

0.05Ohm

36A

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
ZXMN10B08E6TA

Diodes Incorporated

Surface Mount

Surface Mount

SOT-23-6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

1.9A

40

6

-

-

1

-

1.1W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

230m Ω @ 1.6A, 10V

3V @ 250μA

497pF @ 50V

1.6A Ta

9.2nC @ 10V

2.1ns

4.3V 10V

±20V

1.9A

-

-

9A

No SVHC

ROHS3 Compliant

Lead Free

17 Weeks

6

14.996898mg

230mOhm

LOW THRESHOLD

1

Single

1.7W

2.9 ns

2.1 ns

12.1 ns

20V

100V

1.3mm

3.1mm

1.8mm

No

-

-

-

-

ZXMN6A25K vs ZXMN10B08E6TA
ZXMN10A08E6TA

Diodes Incorporated

Surface Mount

Surface Mount

SOT-23-6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1.5A

-

6

-

-

1

-

1.1W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

250m Ω @ 3.2A, 10V

4V @ 250μA

405pF @ 50V

1.5A Ta

7.7nC @ 10V

2.2ns

6V 10V

±20V

3.5A

-

-

-

No SVHC

ROHS3 Compliant

Lead Free

17 Weeks

6

14.996898mg

250mOhm

HIGH RELIABILITY

1

Single

1.7W

3.4 ns

2.2 ns

8 ns

20V

100V

1.3mm

3.1mm

1.8mm

No

-

-

-

-

ZXMN6A25K vs ZXMN10A08E6TA
ZXMN3A02N8TC

Diodes Incorporated

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

8

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1.56W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

25m Ω @ 12A, 10V

1V @ 250μA

1400pF @ 25V

7.3A Ta

26.8nC @ 10V

-

4.5V 10V

±20V

-

9A

0.025Ohm

-

-

ROHS3 Compliant

-

-

-

-

-

LOW THRESHOLD

-

-

-

-

-

-

-

-

-

-

-

-

YES

FET General Purpose Power

30V

30V

ZXMN6A25K vs ZXMN3A02N8TC