ZXMN6A08KTC

Diodes Incorporated ZXMN6A08KTC

Part Number:
ZXMN6A08KTC
Manufacturer:
Diodes Incorporated
Ventron No:
3070162-ZXMN6A08KTC
Description:
MOSFET N-CH 60V 5.36A DPAK
ECAD Model:
Datasheet:
ZXMN6A08KTC

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Specifications
Diodes Incorporated ZXMN6A08KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A08KTC.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.12W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    2.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 4.8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    459pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    5.36A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.8nC @ 10V
  • Rise Time
    2.1ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4.6 ns
  • Turn-Off Delay Time
    12.3 ns
  • Continuous Drain Current (ID)
    7.9A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.08Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN6A08KTC Overview
The maximum input capacitance of this device is 459pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.9A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 12.3 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 2.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

ZXMN6A08KTC Features
a continuous drain current (ID) of 7.9A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.3 ns


ZXMN6A08KTC Applications
There are a lot of Diodes Incorporated
ZXMN6A08KTC applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZXMN6A08KTC More Descriptions
Mosfet, N-Ch, 60V, 5.36A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN6A08KTC
Single N-Channel 60 V 0.15 Ohm 3.8 nC 8.94 mW Silicon SMT Mosfet - TO-252-3
Trans MOSFET N-CH 60V 5.36A 3-Pin(2 Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 5.36A, TO-252;
CoC and 2-years warranty / RFQ for pricing
Product Comparison
The three parts on the right have similar specifications to ZXMN6A08KTC.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Resistance
    Additional Feature
    Voltage - Rated DC
    Terminal Position
    Current Rating
    Power Dissipation
    Surface Mount
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    View Compare
  • ZXMN6A08KTC
    ZXMN6A08KTC
    17 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    40
    4
    R-PSSO-G2
    1
    1
    2.12W Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    2.6 ns
    N-Channel
    SWITCHING
    80m Ω @ 4.8A, 10V
    3V @ 250μA
    459pF @ 40V
    5.36A Ta
    5.8nC @ 10V
    2.1ns
    4.5V 10V
    ±20V
    4.6 ns
    12.3 ns
    7.9A
    TO-252AA
    20V
    0.08Ohm
    60V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN10A08E6TA
    17 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    6
    -
    1
    1
    1.1W Ta
    Single
    ENHANCEMENT MODE
    -
    3.4 ns
    N-Channel
    SWITCHING
    250m Ω @ 3.2A, 10V
    4V @ 250μA
    405pF @ 50V
    1.5A Ta
    7.7nC @ 10V
    2.2ns
    6V 10V
    ±20V
    2.2 ns
    8 ns
    3.5A
    -
    20V
    -
    100V
    1.3mm
    3.1mm
    1.8mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    14.996898mg
    250mOhm
    HIGH RELIABILITY
    100V
    DUAL
    1.5A
    1.7W
    -
    -
    -
    -
    -
    -
  • ZXMN3A02N8TC
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    40
    8
    R-PDSO-G8
    1
    -
    1.56W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    25m Ω @ 12A, 10V
    1V @ 250μA
    1400pF @ 25V
    7.3A Ta
    26.8nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    0.025Ohm
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    LOW THRESHOLD
    -
    DUAL
    -
    -
    YES
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    30V
    9A
    30V
  • ZXMN2A03E6TC
    -
    -
    Surface Mount
    SOT-23-6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    6
    R-PDSO-G6
    1
    -
    1.1W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    55m Ω @ 7.2A, 4.5V
    700mV @ 250μA
    837pF @ 10V
    3.7A Ta
    8.2nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    0.055Ohm
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    LOW THRESHOLD
    -
    DUAL
    -
    -
    YES
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    20V
    3.7A
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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