Diodes Incorporated ZXMN6A08KTC
- Part Number:
- ZXMN6A08KTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070162-ZXMN6A08KTC
- Description:
- MOSFET N-CH 60V 5.36A DPAK
- Datasheet:
- ZXMN6A08KTC
Diodes Incorporated ZXMN6A08KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A08KTC.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.12W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time2.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs80m Ω @ 4.8A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds459pF @ 40V
- Current - Continuous Drain (Id) @ 25°C5.36A Ta
- Gate Charge (Qg) (Max) @ Vgs5.8nC @ 10V
- Rise Time2.1ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4.6 ns
- Turn-Off Delay Time12.3 ns
- Continuous Drain Current (ID)7.9A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.08Ohm
- Drain to Source Breakdown Voltage60V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN6A08KTC Overview
The maximum input capacitance of this device is 459pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.9A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 12.3 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 2.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
ZXMN6A08KTC Features
a continuous drain current (ID) of 7.9A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.3 ns
ZXMN6A08KTC Applications
There are a lot of Diodes Incorporated
ZXMN6A08KTC applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 459pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.9A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 12.3 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 2.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
ZXMN6A08KTC Features
a continuous drain current (ID) of 7.9A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.3 ns
ZXMN6A08KTC Applications
There are a lot of Diodes Incorporated
ZXMN6A08KTC applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZXMN6A08KTC More Descriptions
Mosfet, N-Ch, 60V, 5.36A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN6A08KTC
Single N-Channel 60 V 0.15 Ohm 3.8 nC 8.94 mW Silicon SMT Mosfet - TO-252-3
Trans MOSFET N-CH 60V 5.36A 3-Pin(2 Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 5.36A, TO-252;
CoC and 2-years warranty / RFQ for pricing
Single N-Channel 60 V 0.15 Ohm 3.8 nC 8.94 mW Silicon SMT Mosfet - TO-252-3
Trans MOSFET N-CH 60V 5.36A 3-Pin(2 Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N-CH, 60V, 5.36A, TO-252;
CoC and 2-years warranty / RFQ for pricing
The three parts on the right have similar specifications to ZXMN6A08KTC.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightResistanceAdditional FeatureVoltage - Rated DCTerminal PositionCurrent RatingPower DissipationSurface MountQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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ZXMN6A08KTC17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)2EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING260404R-PSSO-G2112.12W TaSingleENHANCEMENT MODEDRAIN2.6 nsN-ChannelSWITCHING80m Ω @ 4.8A, 10V3V @ 250μA459pF @ 40V5.36A Ta5.8nC @ 10V2.1ns4.5V 10V±20V4.6 ns12.3 ns7.9ATO-252AA20V0.08Ohm60V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free--------------
-
17 WeeksSurface MountSurface MountSOT-23-66SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)GULL WING--6-111.1W TaSingleENHANCEMENT MODE-3.4 nsN-ChannelSWITCHING250m Ω @ 3.2A, 10V4V @ 250μA405pF @ 50V1.5A Ta7.7nC @ 10V2.2ns6V 10V±20V2.2 ns8 ns3.5A-20V-100V1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead Free14.996898mg250mOhmHIGH RELIABILITY100VDUAL1.5A1.7W------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING260408R-PDSO-G81-1.56W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING25m Ω @ 12A, 10V1V @ 250μA1400pF @ 25V7.3A Ta26.8nC @ 10V-4.5V 10V±20V-----0.025Ohm------ROHS3 Compliant---LOW THRESHOLD-DUAL--YESNot QualifiedSINGLE WITH BUILT-IN DIODE30V9A30V
-
--Surface MountSOT-23-6-SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)6EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING260306R-PDSO-G61-1.1W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING55m Ω @ 7.2A, 4.5V700mV @ 250μA837pF @ 10V3.7A Ta8.2nC @ 4.5V-2.5V 4.5V±12V-----0.055Ohm------ROHS3 Compliant---LOW THRESHOLD-DUAL--YESNot QualifiedSINGLE WITH BUILT-IN DIODE20V3.7A20V
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