Diodes Incorporated ZXMN6A07FTC
- Part Number:
- ZXMN6A07FTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2489481-ZXMN6A07FTC
- Description:
- MOSFET N-CH 60V 1.2A SOT23-3
- Datasheet:
- ZXMN6A07FTC
Diodes Incorporated ZXMN6A07FTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A07FTC.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max625mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 1.8A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V
- Current - Continuous Drain (Id) @ 25°C1.2A Ta
- Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)1.1A
- Drain-source On Resistance-Max0.3Ohm
- DS Breakdown Voltage-Min60V
- RoHS StatusRoHS Compliant
ZXMN6A07FTC Overview
The maximum input capacitance of this device is 166pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 1.1A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
ZXMN6A07FTC Features
a 60V drain to source voltage (Vdss)
ZXMN6A07FTC Applications
There are a lot of Diodes Incorporated
ZXMN6A07FTC applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 166pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 1.1A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
ZXMN6A07FTC Features
a 60V drain to source voltage (Vdss)
ZXMN6A07FTC Applications
There are a lot of Diodes Incorporated
ZXMN6A07FTC applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The three parts on the right have similar specifications to ZXMN6A07FTC.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusMountNumber of PinsSupplier Device PackageVoltage - Rated DCMax Power DissipationCurrent RatingContinuous Drain Current (ID)Lead FreeJESD-609 CodeTerminal FinishPower DissipationCase ConnectionRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageWeightPbfree CodeAdditional FeatureNumber of ChannelsTurn On Delay TimeView Compare
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ZXMN6A07FTCSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED3R-PDSO-G3Not Qualified1SINGLE WITH BUILT-IN DIODE625mW TaENHANCEMENT MODEN-ChannelSWITCHING250m Ω @ 1.8A, 10V3V @ 250μA166pF @ 40V1.2A Ta3.2nC @ 10V60V4.5V 10V±20V1.1A0.3Ohm60VRoHS Compliant-----------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)---Digi-Reel®-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)------------N-Channel------20V-----Non-RoHS CompliantSurface Mount88-SO20V2.5W12A7.6AContains Lead--------------
-
Surface MountTO-261-4, TO-261AA-SILICON-55°C~150°C TJTape & Reel (TR)2012Obsolete1 (Unlimited)4EAR99-MOSFET (Metal Oxide)DUALGULL WING260-40-R-PDSO-G4Not Qualified1SINGLE WITH BUILT-IN DIODE2W TaENHANCEMENT MODEN-ChannelSWITCHING350m Ω @ 2.6A, 10V4V @ 250μA274pF @ 50V1.7A Ta5.4nC @ 10V-6V 10V±20V1.9A0.6Ohm-RoHS CompliantSurface Mount--100V-1A1.7ALead Freee3MATTE TIN3.9WDRAIN1.7ns3.5 ns7.4 ns20V100V-----
-
Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)2006Obsolete1 (Unlimited)8EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260-408-Not Qualified1SINGLE WITH BUILT-IN DIODE1.56W TaENHANCEMENT MODEN-ChannelSWITCHING25m Ω @ 12A, 10V1V @ 250μA1400pF @ 25V7.3A Ta26.8nC @ 10V-4.5V 10V±20V9A0.025Ohm-ROHS3 CompliantSurface Mount8-30V-9A9A-e3Matte Tin (Sn)2.5W-5.5ns5.5 ns35 ns20V30V73.992255mgyesLOW THRESHOLD13.9 ns
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