ZXMN6A07FTC

Diodes Incorporated ZXMN6A07FTC

Part Number:
ZXMN6A07FTC
Manufacturer:
Diodes Incorporated
Ventron No:
2489481-ZXMN6A07FTC
Description:
MOSFET N-CH 60V 1.2A SOT23-3
ECAD Model:
Datasheet:
ZXMN6A07FTC

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Specifications
Diodes Incorporated ZXMN6A07FTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A07FTC.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    625mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    250m Ω @ 1.8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    166pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    1.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.2nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    1.1A
  • Drain-source On Resistance-Max
    0.3Ohm
  • DS Breakdown Voltage-Min
    60V
  • RoHS Status
    RoHS Compliant
Description
ZXMN6A07FTC Overview
The maximum input capacitance of this device is 166pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 1.1A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

ZXMN6A07FTC Features
a 60V drain to source voltage (Vdss)


ZXMN6A07FTC Applications
There are a lot of Diodes Incorporated
ZXMN6A07FTC applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Product Comparison
The three parts on the right have similar specifications to ZXMN6A07FTC.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Continuous Drain Current (ID)
    Lead Free
    JESD-609 Code
    Terminal Finish
    Power Dissipation
    Case Connection
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Weight
    Pbfree Code
    Additional Feature
    Number of Channels
    Turn On Delay Time
    View Compare
  • ZXMN6A07FTC
    ZXMN6A07FTC
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    625mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    250m Ω @ 1.8A, 10V
    3V @ 250μA
    166pF @ 40V
    1.2A Ta
    3.2nC @ 10V
    60V
    4.5V 10V
    ±20V
    1.1A
    0.3Ohm
    60V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN2A05N8TA
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    Digi-Reel®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    -
    -
    -
    -
    -
    20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Surface Mount
    8
    8-SO
    20V
    2.5W
    12A
    7.6A
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN10A11GTC
    Surface Mount
    TO-261-4, TO-261AA
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    Obsolete
    1 (Unlimited)
    4
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    -
    R-PDSO-G4
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    350m Ω @ 2.6A, 10V
    4V @ 250μA
    274pF @ 50V
    1.7A Ta
    5.4nC @ 10V
    -
    6V 10V
    ±20V
    1.9A
    0.6Ohm
    -
    RoHS Compliant
    Surface Mount
    -
    -
    100V
    -
    1A
    1.7A
    Lead Free
    e3
    MATTE TIN
    3.9W
    DRAIN
    1.7ns
    3.5 ns
    7.4 ns
    20V
    100V
    -
    -
    -
    -
    -
  • ZXMN3A02N8TA
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    Obsolete
    1 (Unlimited)
    8
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    8
    -
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1.56W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    25m Ω @ 12A, 10V
    1V @ 250μA
    1400pF @ 25V
    7.3A Ta
    26.8nC @ 10V
    -
    4.5V 10V
    ±20V
    9A
    0.025Ohm
    -
    ROHS3 Compliant
    Surface Mount
    8
    -
    30V
    -
    9A
    9A
    -
    e3
    Matte Tin (Sn)
    2.5W
    -
    5.5ns
    5.5 ns
    35 ns
    20V
    30V
    73.992255mg
    yes
    LOW THRESHOLD
    1
    3.9 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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