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ZXMN3A01FTA

Diodes Incorporated ZXMN3A01FTA

Part Number:
ZXMN3A01FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478038-ZXMN3A01FTA
Description:
MOSFET N-CH 30V 1.8A SOT23-3
ECAD Model:
Datasheet:
ZXMN3A01FTA

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Specifications
Diodes Incorporated ZXMN3A01FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN3A01FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    120mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1.8A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    806mW
  • Turn On Delay Time
    1.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    120m Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    190pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.9nC @ 10V
  • Rise Time
    2.3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.3 ns
  • Turn-Off Delay Time
    6.6 ns
  • Continuous Drain Current (ID)
    2A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Nominal Vgs
    1 V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN3A01FTA Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is applied to many fields, like Communications  equipment Broadband fixed line access Industrial Building automation Personal electronics PC & notebooks. The Operating and Storage  The temperature Range is between -55 and 150℃.

ZXMN3A01FTA Features
Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant 

ZXMN3A01FTA Applications
DC-DC Converters Power Management Functions Motor Control
ZXMN3A01FTA More Descriptions
ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
MOSFET N-Channel 30V 2A SOT23 | Diodes Inc ZXMN3A01FTA
MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:2A; Max Voltage Vds:30V; On State Resistance:0.12ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:806mW; Operating Temperature Range:-55ºC to 150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:2A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.12ohm; Max Power Dissipation Ptot:625mW; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:1V; No. of Transistors:1; Power Dissipation Pd:625mW; Pulse Current Idm:8A; Reel Quantity:3000; SMD Marking:7N3; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:30V; Typ Voltage Vgs th:1V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to ZXMN3A01FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Additional Feature
    View Compare
  • ZXMN3A01FTA
    ZXMN3A01FTA
    Diodes Incorporated
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    120mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1.8A
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    806mW
    1.7 ns
    N-Channel
    SWITCHING
    120m Ω @ 2.5A, 10V
    1V @ 250μA
    190pF @ 25V
    1.8A Ta
    3.9nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    2.3 ns
    6.6 ns
    2A
    20V
    30V
    30V
    1 V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN0545FFTA
    ZXMN0545FFTA
    Diodes Incorporated
    -
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    1.5W Ta
    -
    -
    -
    -
    N-Channel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    450V
    -
    -
    -
    -
    -
    -
    -
    ZXMN3A01FTA vs ZXMN0545FFTA
  • ZXMN10A11GTC
    ZXMN10A11GTC
    Diodes Incorporated
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    4
    -
    EAR99
    -
    MATTE TIN
    -
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1A
    40
    -
    1
    -
    2W Ta
    -
    ENHANCEMENT MODE
    3.9W
    -
    N-Channel
    SWITCHING
    350m Ω @ 2.6A, 10V
    4V @ 250μA
    274pF @ 50V
    1.7A Ta
    5.4nC @ 10V
    1.7ns
    6V 10V
    ±20V
    3.5 ns
    7.4 ns
    1.7A
    20V
    100V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    R-PDSO-G4
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    1.9A
    0.6Ohm
    -
    ZXMN3A01FTA vs ZXMN10A11GTC
  • ZXMN3A02N8TA
    ZXMN3A02N8TA
    Diodes Incorporated
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    9A
    40
    8
    1
    1
    1.56W Ta
    -
    ENHANCEMENT MODE
    2.5W
    3.9 ns
    N-Channel
    SWITCHING
    25m Ω @ 12A, 10V
    1V @ 250μA
    1400pF @ 25V
    7.3A Ta
    26.8nC @ 10V
    5.5ns
    4.5V 10V
    ±20V
    5.5 ns
    35 ns
    9A
    20V
    30V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    -
    9A
    0.025Ohm
    LOW THRESHOLD
    ZXMN3A01FTA vs ZXMN3A02N8TA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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