Diodes Incorporated ZXMN10A11GTA
- Part Number:
- ZXMN10A11GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478621-ZXMN10A11GTA
- Description:
- MOSFET N-CH 100V 1.7A SOT223
- Datasheet:
- ZXMN10A11G
Diodes Incorporated ZXMN10A11GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN10A11GTA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance350mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.9W
- Case ConnectionDRAIN
- Turn On Delay Time2.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 2.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds274pF @ 50V
- Current - Continuous Drain (Id) @ 25°C1.7A Ta
- Gate Charge (Qg) (Max) @ Vgs5.4nC @ 10V
- Rise Time1.7ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.5 ns
- Turn-Off Delay Time7.4 ns
- Continuous Drain Current (ID)2.4A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN10A11GTA Overview
A device's maximum input capacitance is 274pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 7.4 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
ZXMN10A11GTA Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 7.4 ns
ZXMN10A11GTA Applications
There are a lot of Diodes Incorporated
ZXMN10A11GTA applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 274pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 7.4 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
ZXMN10A11GTA Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 7.4 ns
ZXMN10A11GTA Applications
There are a lot of Diodes Incorporated
ZXMN10A11GTA applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
ZXMN10A11GTA More Descriptions
ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223
Trans MOSFET N-CH 100V 2.4A 4-Pin(3 Tab) SOT-223 T/R
Mosfet Bvdss: 61V~100V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMN10A11GTA
MOSFET N-Channel 100V 2.4A SOT223 | Diodes Inc ZXMN10A11GTA
Trans MOSFET N-CH 100V 2.4A 4-Pin(3 Tab) SOT-223 T/R
Mosfet Bvdss: 61V~100V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMN10A11GTA
MOSFET N-Channel 100V 2.4A SOT223 | Diodes Inc ZXMN10A11GTA
The three parts on the right have similar specifications to ZXMN10A11GTA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeNumber of PinsSupplier Device PackageMax Power DissipationDrain to Source Voltage (Vdss)Qualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxView Compare
-
ZXMN10A11GTASurface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3noActive1 (Unlimited)4EAR99350mOhmMatte Tin (Sn)FET General Purpose Power100VMOSFET (Metal Oxide)DUALGULL WING2601A40R-PDSO-G4112W TaSingleENHANCEMENT MODE3.9WDRAIN2.7 nsN-ChannelSWITCHING350m Ω @ 2.6A, 10V4V @ 250μA274pF @ 50V1.7A Ta5.4nC @ 10V1.7ns6V 10V±20V3.5 ns7.4 ns2.4A20V100V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)---Digi-Reel®---Obsolete1 (Unlimited)-----20VMOSFET (Metal Oxide)---12A----------N-Channel-----------7.6A-------Non-RoHS CompliantContains Lead88-SO2.5W20V----
-
Surface MountSurface MountSOT-23-3 Flat Leads---Tape & Reel (TR)---Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--------1.5W Ta-----N-Channel-------------------RoHS Compliant----450V----
-
Surface MountSurface MountTO-261-4, TO-261AA-SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99-MATTE TIN-100VMOSFET (Metal Oxide)DUALGULL WING2601A40R-PDSO-G41-2W Ta-ENHANCEMENT MODE3.9WDRAIN-N-ChannelSWITCHING350m Ω @ 2.6A, 10V4V @ 250μA274pF @ 50V1.7A Ta5.4nC @ 10V1.7ns6V 10V±20V3.5 ns7.4 ns1.7A20V100V-----RoHS CompliantLead Free----Not QualifiedSINGLE WITH BUILT-IN DIODE1.9A0.6Ohm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 April 2024
STM32F407ZGT6: Powerful and Flexible Microcontroller
Ⅰ. Overview of STM32F407ZGT6Ⅱ. Functional features of STM32F407ZGT6Ⅲ. Absolute maximum ratings of STM32F407ZGT6Ⅳ. The role of STM32F407ZGT6Ⅴ. Application scope of STM32F407ZGT6Ⅵ. What are the debugging interfaces of STM32F407ZGT6?Ⅶ.... -
15 April 2024
STWD100NYWY3F Watchdog Timer Specifications, Pinout, Characteristics and Application
Ⅰ. Overview of STWD100NYWY3FⅡ. Specifications of STWD100NYWY3FⅢ. DC and AC parameters of STWD100NYWY3FⅣ. The symbol, footprint and pin configuration of STWD100NYWY3FⅤ. Characteristics of STWD100NYWY3FⅥ. How does STWD100NYWY3F work?Ⅶ.... -
15 April 2024
SY8088AAC Step Down Voltage Regulator: Manufacturer, Characteristics and Layout Design
Ⅰ. Overview of SY8088AACⅡ. Manufacturer of SY8088AACⅢ. Electrical characteristics of SY8088AACⅣ. How does SY8088AAC cope with input voltage fluctuations?Ⅴ. Comparison between SY8088AAC and other similar productsⅥ. Layout design... -
16 April 2024
XTR111AIDGQR Alternatives, Pinout, Advantages and Working Principle
Ⅰ. What is XTR111AIDGQR?Ⅱ. XTR111AIDGQR pin diagram and descriptionⅢ. XTR111AIDGQR's external current limitⅣ. XTR111AIDGQR technical advantagesⅤ. Schematic diagram and working principle of XTR111AIDGQRⅥ. Application areas of XTR111AIDGQRⅦ. How...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.