ZXMN10A07FTA

Diodes Incorporated ZXMN10A07FTA

Part Number:
ZXMN10A07FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478004-ZXMN10A07FTA
Description:
MOSFET N-CH 100V 700MA SOT23-3
ECAD Model:
Datasheet:
ZXMN10A07FTA

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Specifications
Diodes Incorporated ZXMN10A07FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN10A07FTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    700mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    800mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    100V
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Current
    8A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    1.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    700m Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    138pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    700mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.9nC @ 10V
  • Rise Time
    1.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    1.5 ns
  • Turn-Off Delay Time
    4.1 ns
  • Continuous Drain Current (ID)
    800mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN10A07FTA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 138pF @ 50V.This device conducts a continuous drain current (ID) of 800mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 4.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).

ZXMN10A07FTA Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4.1 ns


ZXMN10A07FTA Applications
There are a lot of Diodes Incorporated
ZXMN10A07FTA applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZXMN10A07FTA More Descriptions
ZXMN10A07F Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET -SOT-23
Mosfet Bvdss: 61V~100V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXMN10A07FTA
Trans MOSFET N-CH 100V 0.8A 3-Pin SOT-23 T/R
MOSFET N-Channel 100V 0.8A SOT23 | Diodes Inc ZXMN10A07FTA
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity:N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:100V; On Resistance
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to ZXMN10A07FTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Surface Mount
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • ZXMN10A07FTA
    ZXMN10A07FTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    700mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    800mA
    40
    3
    1
    1
    100V
    625mW Ta
    Single
    8A
    ENHANCEMENT MODE
    625mW
    1.8 ns
    N-Channel
    SWITCHING
    700m Ω @ 1.5A, 10V
    4V @ 250μA
    138pF @ 50V
    700mA Ta
    2.9nC @ 10V
    1.5ns
    6V 10V
    ±20V
    1.5 ns
    4.1 ns
    800mA
    20V
    100V
    150°C
    1.1mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN10A08E6TA
    17 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    14.996898mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    250mOhm
    Matte Tin (Sn)
    -
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1.5A
    -
    6
    1
    1
    -
    1.1W Ta
    Single
    -
    ENHANCEMENT MODE
    1.7W
    3.4 ns
    N-Channel
    SWITCHING
    250m Ω @ 3.2A, 10V
    4V @ 250μA
    405pF @ 50V
    1.5A Ta
    7.7nC @ 10V
    2.2ns
    6V 10V
    ±20V
    2.2 ns
    8 ns
    3.5A
    20V
    100V
    -
    1.3mm
    3.1mm
    1.8mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    HIGH RELIABILITY
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMN10A11GTC
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    4
    EAR99
    -
    MATTE TIN
    -
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1A
    40
    -
    1
    -
    -
    2W Ta
    -
    -
    ENHANCEMENT MODE
    3.9W
    -
    N-Channel
    SWITCHING
    350m Ω @ 2.6A, 10V
    4V @ 250μA
    274pF @ 50V
    1.7A Ta
    5.4nC @ 10V
    1.7ns
    6V 10V
    ±20V
    3.5 ns
    7.4 ns
    1.7A
    20V
    100V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    R-PDSO-G4
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    1.9A
    0.6Ohm
    -
    -
    -
  • ZXMN2A03E6TC
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    6
    1
    -
    -
    1.1W Ta
    -
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    55m Ω @ 7.2A, 4.5V
    700mV @ 250μA
    837pF @ 10V
    3.7A Ta
    8.2nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    LOW THRESHOLD
    R-PDSO-G6
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    -
    3.7A
    0.055Ohm
    YES
    20V
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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