Diodes Incorporated ZXMN10A07FTA
- Part Number:
- ZXMN10A07FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478004-ZXMN10A07FTA
- Description:
- MOSFET N-CH 100V 700MA SOT23-3
- Datasheet:
- ZXMN10A07FTA
Diodes Incorporated ZXMN10A07FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN10A07FTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance700mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating800mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Voltage100V
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Current8A
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time1.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs700m Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds138pF @ 50V
- Current - Continuous Drain (Id) @ 25°C700mA Ta
- Gate Charge (Qg) (Max) @ Vgs2.9nC @ 10V
- Rise Time1.5ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)1.5 ns
- Turn-Off Delay Time4.1 ns
- Continuous Drain Current (ID)800mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN10A07FTA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 138pF @ 50V.This device conducts a continuous drain current (ID) of 800mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 4.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
ZXMN10A07FTA Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4.1 ns
ZXMN10A07FTA Applications
There are a lot of Diodes Incorporated
ZXMN10A07FTA applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 138pF @ 50V.This device conducts a continuous drain current (ID) of 800mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 4.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
ZXMN10A07FTA Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4.1 ns
ZXMN10A07FTA Applications
There are a lot of Diodes Incorporated
ZXMN10A07FTA applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZXMN10A07FTA More Descriptions
ZXMN10A07F Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET -SOT-23
Mosfet Bvdss: 61V~100V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXMN10A07FTA
Trans MOSFET N-CH 100V 0.8A 3-Pin SOT-23 T/R
MOSFET N-Channel 100V 0.8A SOT23 | Diodes Inc ZXMN10A07FTA
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity:N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:100V; On Resistance
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Mosfet Bvdss: 61V~100V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXMN10A07FTA
Trans MOSFET N-CH 100V 0.8A 3-Pin SOT-23 T/R
MOSFET N-Channel 100V 0.8A SOT23 | Diodes Inc ZXMN10A07FTA
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity:N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:100V; On Resistance
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to ZXMN10A07FTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureJESD-30 CodeQualification StatusConfigurationCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxSurface MountDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
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ZXMN10A07FTA17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99700mOhmMatte Tin (Sn)FET General Purpose Powers100VMOSFET (Metal Oxide)DUALGULL WING260800mA40311100V625mW TaSingle8AENHANCEMENT MODE625mW1.8 nsN-ChannelSWITCHING700m Ω @ 1.5A, 10V4V @ 250μA138pF @ 50V700mA Ta2.9nC @ 10V1.5ns6V 10V±20V1.5 ns4.1 ns800mA20V100V150°C1.1mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------
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17 WeeksSurface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6EAR99250mOhmMatte Tin (Sn)-100VMOSFET (Metal Oxide)DUALGULL WING-1.5A-611-1.1W TaSingle-ENHANCEMENT MODE1.7W3.4 nsN-ChannelSWITCHING250m Ω @ 3.2A, 10V4V @ 250μA405pF @ 50V1.5A Ta7.7nC @ 10V2.2ns6V 10V±20V2.2 ns8 ns3.5A20V100V-1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead FreeHIGH RELIABILITY---------
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-Surface MountSurface MountTO-261-4, TO-261AA--SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99-MATTE TIN-100VMOSFET (Metal Oxide)DUALGULL WING2601A40-1--2W Ta--ENHANCEMENT MODE3.9W-N-ChannelSWITCHING350m Ω @ 2.6A, 10V4V @ 250μA274pF @ 50V1.7A Ta5.4nC @ 10V1.7ns6V 10V±20V3.5 ns7.4 ns1.7A20V100V------RoHS CompliantLead Free-R-PDSO-G4Not QualifiedSINGLE WITH BUILT-IN DIODEDRAIN1.9A0.6Ohm---
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--Surface MountSOT-23-6--SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)6EAR99-Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING260-3061--1.1W Ta--ENHANCEMENT MODE--N-ChannelSWITCHING55m Ω @ 7.2A, 4.5V700mV @ 250μA837pF @ 10V3.7A Ta8.2nC @ 4.5V-2.5V 4.5V±12V-----------ROHS3 Compliant-LOW THRESHOLDR-PDSO-G6Not QualifiedSINGLE WITH BUILT-IN DIODE-3.7A0.055OhmYES20V20V
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