Fairchild/ON Semiconductor TIP42C
- Part Number:
- TIP42C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463270-TIP42C
- Description:
- TRANS PNP 100V 6A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP, TIP42C
Fairchild/ON Semiconductor TIP42C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP42C.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)6A
- Transition Frequency3MHz
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
TIP42C Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The part has a transition frequency of 3MHz.Device displays Collector Emitter Breakdown (100V maximal voltage).
TIP42C Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
a transition frequency of 3MHz
TIP42C Applications
There are a lot of Rochester Electronics, LLC
TIP42C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The part has a transition frequency of 3MHz.Device displays Collector Emitter Breakdown (100V maximal voltage).
TIP42C Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
a transition frequency of 3MHz
TIP42C Applications
There are a lot of Rochester Electronics, LLC
TIP42C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP42C More Descriptions
TIP42C Series NPN/PNP 100 V 6 A Complementary Power Transistor - TO-220
100V 65W 6A 1.5V@6A,600mA PNP 150¡æ@(Tj) TO-220AB Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, 6A I(C), 1-Element, PNP
Bipolar Transistors - BJT PNP Gen Pur Power
Power Bipolar, PNP, 4V, 600mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):12; Collector Current @ hfe:3µA; DC Collector Current:6A; Leaded Process Compatible:Yes; DC Current Gain Max (hfe):75; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:75; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-1.5V; Continuous Collector Current Ic Max:6A; Current Ic Continuous a Max:6A; Current Ic hFE:300mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:30; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:65W; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:100V
100V 65W 6A 1.5V@6A,600mA PNP 150¡æ@(Tj) TO-220AB Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, 6A I(C), 1-Element, PNP
Bipolar Transistors - BJT PNP Gen Pur Power
Power Bipolar, PNP, 4V, 600mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):12; Collector Current @ hfe:3µA; DC Collector Current:6A; Leaded Process Compatible:Yes; DC Current Gain Max (hfe):75; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:75; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-1.5V; Continuous Collector Current Ic Max:6A; Current Ic Continuous a Max:6A; Current Ic hFE:300mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:30; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:65W; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:100V
The three parts on the right have similar specifications to TIP42C.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningLead FreeMountView Compare
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TIP42CThrough HoleTO-220-3NOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINSINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3COMMERCIAL1SINGLE2WSWITCHINGPNPPNP15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A100V6A3MHz3MHzROHS3 Compliant---------------------------------------------
-
----------------------------------350V1V @ 200mA, 1ANPNTO-220-3-2WBulkTO-220-3150°C (TJ)Through Hole10MHz30 @ 300mA, 10V1mA1A------------------------------
-
Through HoleTO-220-3NOSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3Tin (Sn)-260-403--1--SWITCHINGPNPPNP15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A--3MHz-ROHS3 Compliant--------------ACTIVE (Last Updated: 1 week ago)2 Weeks34.535924g2007EAR99Other Transistors-60V2W6A3MHzTIP42Single2WCOLLECTOR3MHz60V6A45V1.5V60V60V5V306.35mm6.35mm25.4mmNoLead Free-
-
Through HoleTO-220-3---65°C~150°C TJTube--Obsolete1 (Unlimited)-----------2W-PNPPNP15 @ 3A 4V700μA-1.5V @ 600mA, 6A----ROHS3 Compliant---------------18 Weeks3-1993EAR99Other Transistors-65W--TIP42Single---60V6A60V1.5V-100V5V-9.3mm10.4mm4.7mmNo-Through Hole
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