Micro Commercial Co TIP42C-BP
- Part Number:
- TIP42C-BP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 3585263-TIP42C-BP
- Description:
- TRANS PNP 100V 6A TO-220
- Datasheet:
- TIP42C-BP
Micro Commercial Co TIP42C-BP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co TIP42C-BP.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published1993
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberTIP42
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max2W
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)6A
- Transition Frequency3MHz
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
TIP42C-BP Overview
In this device, the DC current gain is 15 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.3MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 100V.
TIP42C-BP Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
a transition frequency of 3MHz
TIP42C-BP Applications
There are a lot of Micro Commercial Co
TIP42C-BP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 15 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.3MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 100V.
TIP42C-BP Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
a transition frequency of 3MHz
TIP42C-BP Applications
There are a lot of Micro Commercial Co
TIP42C-BP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP42C-BP More Descriptions
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 100V 6A 2000mW 3-Pin(3 Tab) TO-220 Box
Medium Power Bipolar Transistors
Trans GP BJT PNP 100V 6A 2000mW 3-Pin(3 Tab) TO-220 Box
Medium Power Bipolar Transistors
The three parts on the right have similar specifications to TIP42C-BP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusNumber of PinsWeightSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeMountNumber of TerminalsHTS CodeTerminal FormReach Compliance CodeOperating Temperature (Max)Power Dissipation-Max (Abs)Collector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxView Compare
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TIP42C-BP12 WeeksThrough HoleTO-220-3NOSILICON150°C TJTube1993e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDTIP423R-PSFM-T3Not Qualified1SINGLE2WPNPPNP15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A100V6A3MHz3MHzROHS3 Compliant--------------------------------------
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2 WeeksThrough HoleTO-220-3NOSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)-26040TIP413--1--NPNNPN15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A--3MHz-ROHS3 CompliantACTIVE (Last Updated: 1 week ago)34.535924gOther Transistors60V2W6A3MHzSingle2WCOLLECTORSWITCHING3MHz60V6A60V1.5V60V60V5V306.35mm6.35mm25.4mmNo SVHCNoLead Free----------
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-Through HoleTO-220-3---65°C~150°C TJTube1993--Obsolete1 (Unlimited)-EAR99----TIP42----Single2WPNPPNP15 @ 3A 4V700μA-1.5V @ 600mA, 6A----ROHS3 Compliant-3-Other Transistors-2W-------1.5V6A40V--80V------No-Through Hole---------
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---NOSILICON---e0icon-pbfree no---EAR99Tin/Lead (Sn/Pb)SINGLENOT SPECIFIEDNOT SPECIFIED-3R-PSFM-T3Not Qualified1SINGLE-NPN---TO-220AB---3MHz-Non-RoHS Compliant---Other Transistors------COLLECTORSWITCHING----------------38541.29.00.95THROUGH-HOLEcompliant150°C65W6A1540V
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