STMicroelectronics TIP42C
- Part Number:
- TIP42C
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2846626-TIP42C
- Description:
- TRANS PNP 100V 6A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP, TIP42C
STMicroelectronics TIP42C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP42C.
- Voltage - Collector Emitter Breakdown (Max):100V
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 600mA, 6A
- Transistor Type:PNP
- Supplier Device Package:TO-220AB
- Series:-
- Power - Max:65W
- Packaging:Tube
- Package / Case:TO-220-3
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 3A, 4V
- Current - Collector Cutoff (Max):700µA
- Current - Collector (Ic) (Max):6A
part No. TIP42C Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
TIP42C More Descriptions
TIP42C Series NPN/PNP 100 V 6 A Complementary Power Transistor - TO-220
100V 65W 6A 1.5V@6A,600mA PNP 150¡æ@(Tj) TO-220AB Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, 6A I(C), 1-Element, PNP
Bipolar Transistors - BJT PNP Gen Pur Power
Power Bipolar, PNP, 4V, 600mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):12; Collector Current @ hfe:3µA; DC Collector Current:6A; Leaded Process Compatible:Yes; DC Current Gain Max (hfe):75; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:75; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-1.5V; Continuous Collector Current Ic Max:6A; Current Ic Continuous a Max:6A; Current Ic hFE:300mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:30; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:65W; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:100V
100V 65W 6A 1.5V@6A,600mA PNP 150¡æ@(Tj) TO-220AB Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, 6A I(C), 1-Element, PNP
Bipolar Transistors - BJT PNP Gen Pur Power
Power Bipolar, PNP, 4V, 600mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):12; Collector Current @ hfe:3µA; DC Collector Current:6A; Leaded Process Compatible:Yes; DC Current Gain Max (hfe):75; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:75; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-1.5V; Continuous Collector Current Ic Max:6A; Current Ic Continuous a Max:6A; Current Ic hFE:300mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:30; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:65W; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:100V
The three parts on the right have similar specifications to TIP42C.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountView Compare
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TIP42C100V1.5V @ 600mA, 6APNPTO-220AB-65WTubeTO-220-3150°C (TJ)Through Hole-15 @ 3A, 4V700µA6A-------------------------------------------------------------
-
--------------ACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-60V2W2606A3MHz40TIP4231Single2WCOLLECTORSWITCHING3MHzPNPPNP60V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A45V3MHz1.5V60V60V5V306.35mm6.35mm25.4mmNoROHS3 CompliantLead Free------
-
----------------Through HoleTO-220-3----150°C TJTube---Obsolete1 (Unlimited)----------TIP49--------NPN--30 @ 300mA 10V1mA-1V @ 200mA, 1A-------------TO-220-32W350V1A10MHz-
-
---------------18 WeeksThrough HoleTO-220-3-3---65°C~150°C TJTube1993--Obsolete1 (Unlimited)-EAR99-Other Transistors-65W----TIP42--Single----PNPPNP60V6A15 @ 3A 4V700μA-1.5V @ 600mA, 6A60V-1.5V-100V5V-9.3mm10.4mm4.7mmNoROHS3 Compliant--2W---Through Hole
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