ON Semiconductor TIP41AG
- Part Number:
- TIP41AG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069007-TIP41AG
- Description:
- TRANS NPN 60V 6A TO-220AB
- Datasheet:
- TIP41AG
ON Semiconductor TIP41AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP41AG.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating6A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP41
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height6.35mm
- Length6.35mm
- Width25.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP41AG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
TIP41AG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
TIP41AG Applications
There are a lot of ON Semiconductor
TIP41AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
TIP41AG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
TIP41AG Applications
There are a lot of ON Semiconductor
TIP41AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP41AG More Descriptions
Trans GP BJT NPN 60V 6A Automotive 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Bipolar Power Transistor 60 V
60V 65W 6A 15@3A4V 3MHz 1.5V@6A600mA NPN -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Transistor, Npn, 60V, 6A, To-220; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:65W; Dc Collector Current:6A; Dc Current Gain Hfe:15Hfe; Transistor Case Rohs Compliant: Yes |Onsemi TIP41AG
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Bipolar Power Transistor 60 V
60V 65W 6A 15@3A4V 3MHz 1.5V@6A600mA NPN -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Transistor, Npn, 60V, 6A, To-220; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:65W; Dc Collector Current:6A; Dc Current Gain Hfe:15Hfe; Transistor Case Rohs Compliant: Yes |Onsemi TIP41AG
The three parts on the right have similar specifications to TIP41AG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountNumber of TerminalsHTS CodeTerminal FormReach Compliance CodeOperating Temperature (Max)Power Dissipation-Max (Abs)Collector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxView Compare
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TIP41AGACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V2W2606A3MHz40TIP4131Single2WCOLLECTORSWITCHING3MHzNPNNPN60V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A60V3MHz1.5V60V60V5V306.35mm6.35mm25.4mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
-12 WeeksThrough HoleTO-220-3NO--SILICON150°C TJTube1993e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)---NOT SPECIFIED--NOT SPECIFIEDTIP4231-----PNPPNP--15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A-3MHz----------ROHS3 Compliant-SINGLER-PSFM-T3Not QualifiedSINGLE2W100V6A3MHz----------
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-18 WeeksThrough HoleTO-220-3-3---65°C~150°C TJTube1993--Obsolete1 (Unlimited)-EAR99-Other Transistors-65W----TIP42--Single----PNPPNP60V6A15 @ 3A 4V700μA-1.5V @ 600mA, 6A60V-1.5V-100V5V-9.3mm10.4mm4.7mm-NoROHS3 Compliant-----2W---Through Hole---------
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----NO--SILICON---e0icon-pbfree no---EAR99Tin/Lead (Sn/Pb)Other Transistors--NOT SPECIFIED--NOT SPECIFIED-31--COLLECTORSWITCHING-NPN-----TO-220AB--3MHz----------Non-RoHS Compliant-SINGLER-PSFM-T3Not QualifiedSINGLE-----38541.29.00.95THROUGH-HOLEcompliant150°C65W6A1540V
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