ON Semiconductor TIP42BG
- Part Number:
- TIP42BG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463635-TIP42BG
- Description:
- TRANS PNP 80V 6A TO-220AB
- Datasheet:
- TIP42BG
ON Semiconductor TIP42BG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP42BG.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating6A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP42BG Overview
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 600mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 6A volts is possible.
TIP42BG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
TIP42BG Applications
There are a lot of ON Semiconductor
TIP42BG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 600mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 6A volts is possible.
TIP42BG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
TIP42BG Applications
There are a lot of ON Semiconductor
TIP42BG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP42BG More Descriptions
Transistor GP BJT PNP 80V 6A 3-Pin (3 Tab) TO-220AB Rail
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
PNP Bipolar Power Transistor 80 V
80V 65W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Transistor, Pnp, -80V, -6A, To-220; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:65W; Dc Collector Current:-6A; Dc Current Gain Hfe:15Hfe; Transistor Case Rohs Compliant: Yes |Onsemi TIP42BG
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
PNP Bipolar Power Transistor 80 V
80V 65W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Transistor, Pnp, -80V, -6A, To-220; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:65W; Dc Collector Current:-6A; Dc Current Gain Hfe:15Hfe; Transistor Case Rohs Compliant: Yes |Onsemi TIP42BG
The three parts on the right have similar specifications to TIP42BG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeWeightHeightLengthWidthREACH SVHCVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP42BGACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-80V2W2606A3MHz40TIP4231Single2WCOLLECTORSWITCHING3MHzPNPPNP80V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A80V3MHz1.5V80V80V5V30NoROHS3 CompliantLead Free--------------------
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ACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-60V2W2606A3MHz40TIP4231Single2WCOLLECTORSWITCHING3MHzPNPPNP60V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A45V3MHz1.5V60V60V5V30NoROHS3 CompliantLead Free4.535924g6.35mm6.35mm25.4mm---------------
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ACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V2W2606A3MHz40TIP4131Single2WCOLLECTORSWITCHING3MHzNPNNPN60V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A60V3MHz1.5V60V60V5V30NoROHS3 CompliantLead Free4.535924g6.35mm6.35mm25.4mmNo SVHC--------------
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-------------------------------------------------------100V1.5V @ 600mA, 6APNPTO-220AB-65WTubeTO-220-3150°C (TJ)Through Hole-15 @ 3A, 4V700µA6A
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