STMicroelectronics STW48NM60N

Name: STW48NM60N
Brand: STMicroelectronics
SKU: 2479129-STW48NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW48NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2479129-STW48NM60N

Description:: MOSFET N-CH 600V 39A TO-247

ECAD Model:

Datasheet:: STW48NM60N

Specifications

STMicroelectronics STW48NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW48NM60N.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
70MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW48N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
330W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
255W
Turn On Delay Time
99 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
70m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4285pF @ 50V
Current - Continuous Drain (Id) @ 25°C
44A Tc
Gate Charge (Qg) (Max) @ Vgs
124nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
25.5 ns
Turn-Off Delay Time
214 ns
Continuous Drain Current (ID)
44A
Threshold Voltage
3.2V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
457 mJ
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW48NM60N Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 457 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4285pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 44A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 214 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 99 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STW48NM60N Features
the avalanche energy rating (Eas) is 457 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 214 ns
a threshold voltage of 3.2V

STW48NM60N Applications
There are a lot of STMicroelectronics
STW48NM60N applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STW48NM60N More Descriptions

N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
Single N-Channel 600 V 0.07 Ohm 330 W Mdmesh Flange Mount Mosfet - TO-247-3
Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N Ch, 600V, 39A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW48NM60N

Product Comparison

The three parts on the right have similar specifications to STW48NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Finish

Voltage - Rated DC

Current Rating

JESD-30 Code

Case Connection

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Configuration

Drain to Source Voltage (Vdss)

View Compare
STW48NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

70MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STW48N

3

1

330W Tc

Single

ENHANCEMENT MODE

255W

99 ns

N-Channel

SWITCHING

70m Ω @ 20A, 10V

4V @ 250μA

4285pF @ 50V

44A Tc

124nC @ 10V

18ns

10V

±25V

25.5 ns

214 ns

44A

3.2V

25V

600V

457 mJ

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW40N20

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

STripFET™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STW40N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

20 ns

N-Channel

SWITCHING

45m Ω @ 20A, 10V

4V @ 250μA

2500pF @ 25V

40A Tc

75nC @ 10V

44ns

10V

±20V

24 ns

74 ns

40A

-

20V

200V

230 mJ

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

Matte Tin (Sn)

200V

40A

R-PSFM-T3

DRAIN

TO-247AC

0.045Ohm

160A

-

-

-

-

STW48NM60N vs STW40N20
STW43NM60N

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

88mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STW43N

3

1

255W Tc

Single

ENHANCEMENT MODE

255W

25 ns

N-Channel

SWITCHING

88m Ω @ 17.5A, 10V

5V @ 250μA

4200pF @ 50V

35A Tc

130nC @ 10V

45ns

10V

±30V

60 ns

130 ns

17.5A

-

30V

600V

-

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Tin (Sn)

-

-

-

-

TO-247AC

-

-

-

-

-

-

STW48NM60N vs STW43NM60N
STW48N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

Through Hole

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STW48N

-

-

300W Tc

-

-

-

-

N-Channel

-

70m Ω @ 21A, 10V

4V @ 250μA

3060pF @ 100V

42A Tc

70nC @ 10V

-

10V

±25V

-

-

42A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

Single

600V

STW48NM60N vs STW48N60M2