STMicroelectronics STW48N60DM2
- Part Number:
- STW48N60DM2
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2480112-STW48N60DM2
- Description:
- MOSFET N-CH 600V 40A
- Datasheet:
- STW48N60DM2
STMicroelectronics STW48N60DM2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW48N60DM2.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ DM2
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTW48N
- Power Dissipation-Max300W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs79m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3250pF @ 100V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Continuous Drain Current (ID)40A
- Threshold Voltage4V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
STW48N60DM2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3250pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STW48N60DM2 Features
a continuous drain current (ID) of 40A
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
STW48N60DM2 Applications
There are a lot of STMicroelectronics
STW48N60DM2 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3250pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STW48N60DM2 Features
a continuous drain current (ID) of 40A
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
STW48N60DM2 Applications
There are a lot of STMicroelectronics
STW48N60DM2 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STW48N60DM2 More Descriptions
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
N-Channel 600 V 79 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
MOSFET, N-CH, 600V, 40A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
N-Channel 600 V 79 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
MOSFET, N-CH, 600V, 40A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
The three parts on the right have similar specifications to STW48N60DM2.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageREACH SVHCRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsResistanceTerminal FinishSubcategoryPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningLead FreeVoltage - Rated DCCurrent RatingCase ConnectionDrain-source On Resistance-MaxView Compare
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STW48N60DM2ACTIVE (Last Updated: 8 months ago)17 WeeksThrough HoleThrough HoleTO-247-33-55°C~150°C TJTubeMDmesh™ DM2Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTW48N300W TcN-Channel79m Ω @ 20A, 10V5V @ 250μA3250pF @ 100V40A Tc70nC @ 10V600V10V±25V40A4VNo SVHCROHS3 Compliant-----------------------------
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--Through HoleThrough HoleTO-247-33150°C TJTubeMDmesh™ IIObsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)--STW43N255W TcN-Channel88m Ω @ 17.5A, 10V5V @ 250μA4200pF @ 50V35A Tc130nC @ 10V-10V±30V17.5A-No SVHCROHS3 CompliantSILICONe3388mOhmTin (Sn)FET General Purpose Power31SingleENHANCEMENT MODE255W25 nsSWITCHING45ns60 ns130 nsTO-247AC30V600V20.15mm15.75mm5.15mmNoLead Free----
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ACTIVE (Last Updated: 8 months ago)17 WeeksThrough HoleThrough HoleTO-247-3--55°C~150°C TJTubeAutomotive, AEC-Q101, MDmesh™ DM2Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTW45N250W TcN-Channel93m Ω @ 17A, 10V5V @ 250μA2500pF @ 100V34A Tc56nC @ 10V600V10V±25V34A--ROHS3 Compliant----------------------------
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-247-33-55°C~150°C TJTubeSTripFET™Active1 (Unlimited)EAR99MOSFET (Metal Oxide)--STW40N160W TcN-Channel45m Ω @ 20A, 10V4V @ 250μA2500pF @ 25V40A Tc75nC @ 10V-10V±20V40A3VNo SVHCROHS3 CompliantSILICONe33-Matte Tin (Sn)FET General Purpose Power31SingleENHANCEMENT MODE160W20 nsSWITCHING44ns22 ns74 ns-20V200V20.15mm15.75mm5.15mmNoLead Free200V40ADRAIN0.045Ohm
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