STW48N60DM2

STMicroelectronics STW48N60DM2

Part Number:
STW48N60DM2
Manufacturer:
STMicroelectronics
Ventron No:
2480112-STW48N60DM2
Description:
MOSFET N-CH 600V 40A
ECAD Model:
Datasheet:
STW48N60DM2

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Specifications
STMicroelectronics STW48N60DM2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW48N60DM2.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ DM2
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STW48N
  • Power Dissipation-Max
    300W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    79m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3250pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    4V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
STW48N60DM2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3250pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STW48N60DM2 Features
a continuous drain current (ID) of 40A
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


STW48N60DM2 Applications
There are a lot of STMicroelectronics
STW48N60DM2 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STW48N60DM2 More Descriptions
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
N-Channel 600 V 79 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
MOSFET, N-CH, 600V, 40A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Product Comparison
The three parts on the right have similar specifications to STW48N60DM2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    REACH SVHC
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Resistance
    Terminal Finish
    Subcategory
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Voltage - Rated DC
    Current Rating
    Case Connection
    Drain-source On Resistance-Max
    View Compare
  • STW48N60DM2
    STW48N60DM2
    ACTIVE (Last Updated: 8 months ago)
    17 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    MDmesh™ DM2
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STW48N
    300W Tc
    N-Channel
    79m Ω @ 20A, 10V
    5V @ 250μA
    3250pF @ 100V
    40A Tc
    70nC @ 10V
    600V
    10V
    ±25V
    40A
    4V
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STW43NM60N
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    150°C TJ
    Tube
    MDmesh™ II
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    STW43N
    255W Tc
    N-Channel
    88m Ω @ 17.5A, 10V
    5V @ 250μA
    4200pF @ 50V
    35A Tc
    130nC @ 10V
    -
    10V
    ±30V
    17.5A
    -
    No SVHC
    ROHS3 Compliant
    SILICON
    e3
    3
    88mOhm
    Tin (Sn)
    FET General Purpose Power
    3
    1
    Single
    ENHANCEMENT MODE
    255W
    25 ns
    SWITCHING
    45ns
    60 ns
    130 ns
    TO-247AC
    30V
    600V
    20.15mm
    15.75mm
    5.15mm
    No
    Lead Free
    -
    -
    -
    -
  • STW45N60DM2AG
    ACTIVE (Last Updated: 8 months ago)
    17 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    Automotive, AEC-Q101, MDmesh™ DM2
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STW45N
    250W Tc
    N-Channel
    93m Ω @ 17A, 10V
    5V @ 250μA
    2500pF @ 100V
    34A Tc
    56nC @ 10V
    600V
    10V
    ±25V
    34A
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STW40NF20
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    STripFET™
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    STW40N
    160W Tc
    N-Channel
    45m Ω @ 20A, 10V
    4V @ 250μA
    2500pF @ 25V
    40A Tc
    75nC @ 10V
    -
    10V
    ±20V
    40A
    3V
    No SVHC
    ROHS3 Compliant
    SILICON
    e3
    3
    -
    Matte Tin (Sn)
    FET General Purpose Power
    3
    1
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    SWITCHING
    44ns
    22 ns
    74 ns
    -
    20V
    200V
    20.15mm
    15.75mm
    5.15mm
    No
    Lead Free
    200V
    40A
    DRAIN
    0.045Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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