STMicroelectronics STW45NM50

Name: STW45NM50
Brand: STMicroelectronics
SKU: 2485677-STW45NM50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW45NM50

Manufacturer:: STMicroelectronics

Ventron No:: 2485677-STW45NM50

Description:: MOSFET N-CH 500V 45A TO-247

ECAD Model:

Datasheet:: STW45NM50

Specifications

STMicroelectronics STW45NM50 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW45NM50.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
9.071847g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
100mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
45A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW45N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
417W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
417W
Turn On Delay Time
29.1 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
117nC @ 10V
Rise Time
107.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
87.7 ns
Turn-Off Delay Time
21.6 ns
Continuous Drain Current (ID)
45A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Max Junction Temperature (Tj)
150°C
Height
24.45mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW45NM50 Description
STMicroelectronics' STW45NM50 N-Channel power MOSFET is an N-Channel power MOSFET. STMicroelectronics' groundbreaking MDmeshTM technology, which associates the multiple drain process with the company's PowerMESHTM horizontal layout, was used to create this N-channel Power MOSFET. This device has a low on-resistance, a high DV/DT, and excellent avalanche properties. This Power MOSFET has an overall dynamic performance superior to similar devices on the market, thanks to ST's patented strip process.

STW45NM50 Features
100% avalanche tested
High DV/DT and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance

STW45NM50 Applications
Switching applications High Input Impedance Very Low Noise

STW45NM50 More Descriptions

N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3 Tab) TO-247
N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247
Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

Product Comparison

The three parts on the right have similar specifications to STW45NM50.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Configuration

View Compare
STW45NM50

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-247-3

3

9.071847g

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

EAR99

100mOhm

Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

45A

NOT SPECIFIED

STW45N

3

Not Qualified

1

1

417W Tc

Single

ENHANCEMENT MODE

417W

29.1 ns

N-Channel

SWITCHING

100m Ω @ 22.5A, 10V

5V @ 250μA

3700pF @ 25V

45A Tc

117nC @ 10V

107.5ns

10V

±30V

87.7 ns

21.6 ns

45A

4V

TO-247AC

30V

500V

150°C

24.45mm

15.75mm

5.15mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-
STW43N60DM2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

17 Weeks

Through Hole

Through Hole

TO-247-3

3

-

-

-55°C~150°C TJ

Tube

MDmesh™ DM2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STW43N

-

-

-

-

250W Tc

-

-

-

-

N-Channel

-

93m Ω @ 17A, 10V

5V @ 250μA

2500pF @ 100V

34A Tc

56nC @ 10V

-

10V

±25V

-

-

34A

4V

-

-

-

-

-

-

-

No SVHC

ROHS3 Compliant

-

600V

-

STW45NM50 vs STW43N60DM2
STW48N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-247-3

-

-

-

-55°C~150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STW48N

-

-

-

-

300W Tc

-

-

-

-

N-Channel

-

70m Ω @ 21A, 10V

4V @ 250μA

3060pF @ 100V

42A Tc

70nC @ 10V

-

10V

±25V

-

-

42A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

600V

Single

STW45NM50 vs STW48N60M2
STW45NM50FD

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

3

9.071847g

-

-65°C~150°C TJ

Tube

FDmesh™

-

Obsolete

1 (Unlimited)

-

EAR99

100mOhm

-

-

500V

MOSFET (Metal Oxide)

-

not_compliant

45A

-

STW45N

3

-

1

-

417W Tc

Single

-

417W

26.5 ns

N-Channel

-

100m Ω @ 22.5A, 10V

5V @ 250μA

3600pF @ 25V

45A Tc

120nC @ 10V

107.5ns

10V

±30V

87.7 ns

21.6 ns

45A

4V

-

30V

500V

-

20.15mm

15.75mm

5.15mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

STW45NM50 vs STW45NM50FD