STMicroelectronics STP55NF06FP
- Part Number:
- STP55NF06FP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482960-STP55NF06FP
- Description:
- MOSFET N-CH 60V 50A TO220FP
- ECAD Model:
-
- Datasheet:
- STP55NF06FP
STMicroelectronics STP55NF06FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP55NF06FP.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance18mOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating50A
- Base Part NumberSTP55N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max30W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation30W
- Case ConnectionISOLATED
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs18m Ω @ 27.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)50A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)200A
- Dual Supply Voltage60V
- Nominal Vgs3 V
- Height9.3mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP55NF06FP Description
STP55NF06FP emerges as a member of N-channel STripFET? II power MOSFETs provided by STMicroelectronics based on its unique STripFET process that is developed to minimize input capacitance and gate charge. The resulting STP55NF06FP can be widely used for applications requiring low gate charge, and it can be as a primary switch in high-efficiency isolated DC/DC converters for telecom and computer applications.
STP55NF06FP Features
Low gate charge
Low input capacitance
Unique STripFET process
Exceptional dv/dt capability
Available in the TO-220 package
STP55NF06FP Applications
Switching applications
STP55NF06FP emerges as a member of N-channel STripFET? II power MOSFETs provided by STMicroelectronics based on its unique STripFET process that is developed to minimize input capacitance and gate charge. The resulting STP55NF06FP can be widely used for applications requiring low gate charge, and it can be as a primary switch in high-efficiency isolated DC/DC converters for telecom and computer applications.
STP55NF06FP Features
Low gate charge
Low input capacitance
Unique STripFET process
Exceptional dv/dt capability
Available in the TO-220 package
STP55NF06FP Applications
Switching applications
STP55NF06FP More Descriptions
N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220FP package
Trans Mosfet N-Ch 60V 50A 3-Pin(3 Tab) To-220Fp Tube Rohs Compliant: Yes
N-Channel 60 V 18 mO STripFET II Power MosFet - TO-220FP
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans Mosfet N-Ch 60V 50A 3-Pin(3 Tab) To-220Fp Tube Rohs Compliant: Yes
N-Channel 60 V 18 mO STripFET II Power MosFet - TO-220FP
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP55NF06FP.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeAdditional FeatureJESD-30 CodeDrain Current-Max (Abs) (ID)Drain to Source Voltage (Vdss)Avalanche Energy Rating (Eas)View Compare
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STP55NF06FPACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR9918mOhmMatte Tin (Sn) - annealedFET General Purpose Power60VMOSFET (Metal Oxide)50ASTP55N3130W TcSingleENHANCEMENT MODE30WISOLATED20 nsN-ChannelSWITCHING18m Ω @ 27.5A, 10V4V @ 250μA1300pF @ 25V50A Tc60nC @ 10V50ns10V±20V15 ns36 ns50A3VTO-220AB20V60V200A60V3 V9.3mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free------- -
--Through HoleThrough HoleTO-220-3-SILICON-55°C~150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3--Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP5N3185W TcSingleENHANCEMENT MODE85W-20 nsN-ChannelSWITCHING1.8 Ω @ 2.1A, 10V4.5V @ 50μA680pF @ 25V5A Tc35nC @ 10V15ns10V±30V40 ns140 ns5A-TO-220AB30V650V20A------NoROHS3 Compliant-yesAVALANCHE RATEDR-PSFM-T35A--
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--Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH3™e3Obsolete1 (Unlimited)3EAR991.5OhmMatte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP5N3170W TcSingleENHANCEMENT MODE70W-9 nsN-ChannelSWITCHING1.5 Ω @ 2.2A, 10V4.5V @ 50μA450pF @ 100V4.4A Tc14nC @ 10V11ns10V±30V16 ns29 ns4.4A3.75VTO-220AB30V525V---15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Freeyes-----
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--Through HoleThrough HoleTO-220-3-SILICON-55°C~150°C TJTubeSuperMESH™-Obsolete1 (Unlimited)3EAR993.5Ohm-FET General Purpose Power-MOSFET (Metal Oxide)-STP5N31160W TcSingleENHANCEMENT MODE160W-18 nsN-ChannelSWITCHING3.5 Ω @ 2.3A, 10V5V @ 100μA120pF @ 25V4.7A Tc55nC @ 10V9ns10V±30V30 ns42 ns4.7A-TO-220AB30V1.2kV-------NoROHS3 CompliantLead Free--R-PSFM-T34.4A1200V400 mJ
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