STMicroelectronics STL7N60M2

Name: STL7N60M2
Brand: STMicroelectronics
SKU: 2483904-STL7N60M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STL7N60M2

Manufacturer:: STMicroelectronics

Ventron No:: 2483904-STL7N60M2

Description:: MOSFET N-CH 600V 5A POWERFLAT

ECAD Model:

Datasheet:: STL7N60M2

Specifications

STMicroelectronics STL7N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STL7N60M2.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL7
Configuration
Single
Power Dissipation-Max
4W Ta 67W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.05 Ω @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
271pF @ 100V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
8.8nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
5A
Drain Current-Max (Abs) (ID)
5A
RoHS Status
ROHS3 Compliant

Description

STL7N60M2 Description The STL7N60M2 is an N-channel Power MOSFET developed using MDmesh? M2 technology. The STL7N60M2 MOSFET has low on-resistance and optimum switching properties because of its strip layout and an improved vertical structure, making it suited for the most demanding high-efficiency converters.
STL7N60M2 Features Zener-protected
100% avalanche tested
Shallow gate charge
Excellent output capacitance (COSS) profile
STL7N60M2 Applications Signal Processing
Power Management
Portable Devices
Consumer Electronics
Audio amplifier Circuits
Any Signal Amplification
Audio Preamplifier
Darlington pair
RF circuits

STL7N60M2 More Descriptions

N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package
Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 5A 12-Pin Power Flat EP T/R
600V 5A 4W 1.05´Î@10V2A 4V@250Ã×A N Channel PowerFLAT-5x5-12 MOSFETs ROHS
Hv Mosfet Mdmesh |Stmicroelectronics STL7N60M2
Power MOSFETs, 600V, 5A, PowerFLAT 5x5 HV, Tape and ReelSTMicroelectronics SCT
N-CH 600V 5A 920mOhm PwFLAT5x5

Product Comparison

The three parts on the right have similar specifications to STL7N60M2.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Configuration

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

RoHS Status

Transistor Element Material

Number of Terminations

Terminal Position

Pin Count

JESD-30 Code

Number of Elements

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

Lifecycle Status

Lead Free

JESD-609 Code

Resistance

Terminal Finish

Terminal Form

Drain to Source Breakdown Voltage

View Compare
STL7N60M2

STMicroelectronics

12 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

150°C TJ

Tape & Reel (TR)

MDmesh™

Active

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STL7

Single

4W Ta 67W Tc

N-Channel

1.05 Ω @ 2A, 10V

4V @ 250μA

271pF @ 100V

5A Tc

8.8nC @ 10V

600V

10V

±25V

5A

5A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STL75N8LF6

STMicroelectronics

-

Surface Mount

Surface Mount

8-PowerVDFN

8

-55°C~175°C TJ

Tape & Reel (TR)

DeepGATE™, STripFET™ VI

Obsolete

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

STL75

SINGLE WITH BUILT-IN DIODE

80W Tc

N-Channel

7.4m Ω @ 9A, 10V

1V @ 250μA

6895pF @ 25V

75A Tc

125nC @ 4.5V

80V

5V 10V

21V, -16V

75A

-

ROHS3 Compliant

SILICON

5

DUAL

8

R-PDSO-N5

1

ENHANCEMENT MODE

80W

DRAIN

17 ns

SWITCHING

14ns

26 ns

112 ns

20V

72A

670 mJ

No

-

-

-

-

-

-

-

STL7N60M2 vs STL75N8LF6
STL7N6F7

STMicroelectronics

22 Weeks

-

Surface Mount

6-PowerWDFN

-

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

STL7

-

2.4W Ta

N-Channel

25m Ω @ 3.5A, 10V

4V @ 250μA

450pF @ 25V

7A Tc

8nC @ 10V

60V

10V

±20V

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

Lead Free

-

-

-

-

-

STL7N60M2 vs STL7N6F7
STL70N4LLF5

STMicroelectronics

14 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

-55°C~175°C TJ

Cut Tape (CT)

Automotive, AEC-Q101, STripFET™ V

Active

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

260

30

STL70

SINGLE WITH BUILT-IN DIODE

72W Tc

N-Channel

6.5m Ω @ 9A, 10V

1V @ 250μA

1800pF @ 25V

70A Tc

13nC @ 4.5V

-

4.5V 10V

±22V

70A

-

ROHS3 Compliant

SILICON

5

DUAL

8

R-XDSO-F5

1

ENHANCEMENT MODE

60W

DRAIN

14 ns

SWITCHING

42ns

5.2 ns

37 ns

22V

72A

-

No

ACTIVE (Last Updated: 7 months ago)

Lead Free

e3

6.5mOhm

Matte Tin (Sn)

FLAT

40V

STL7N60M2 vs STL70N4LLF5