STMicroelectronics STH265N6F6-2AG
- Part Number:
- STH265N6F6-2AG
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482281-STH265N6F6-2AG
- Description:
- MOSFET N-CH 60V 180A H2PAK-2
- Datasheet:
- STH265N6F6-2AG
STMicroelectronics STH265N6F6-2AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STH265N6F6-2AG.
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101, STripFET™ F6
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTH265
- ConfigurationSingle
- Power Dissipation-Max300W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.1m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds11800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs183nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)180A
- RoHS StatusROHS3 Compliant
STH265N6F6-2AG Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 11800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STH265N6F6-2AG Features
a continuous drain current (ID) of 180A
a 60V drain to source voltage (Vdss)
STH265N6F6-2AG Applications
There are a lot of STMicroelectronics
STH265N6F6-2AG applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 11800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STH265N6F6-2AG Features
a continuous drain current (ID) of 180A
a 60V drain to source voltage (Vdss)
STH265N6F6-2AG Applications
There are a lot of STMicroelectronics
STH265N6F6-2AG applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
STH265N6F6-2AG More Descriptions
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 180A Automotive 3-Pin(2 Tab) H2PAK T/R
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
Trans MOSFET N-CH 60V 180A Automotive 3-Pin(2 Tab) H2PAK T/R
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
The three parts on the right have similar specifications to STH265N6F6-2AG.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusMaterialWeightPublishedFeatureColorHeightLengthREACH SVHCRadiation HardeningLifecycle StatusResistanceNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageView Compare
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STH265N6F6-2AG20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ F6Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH265Single300W TcN-Channel2.1m Ω @ 60A, 10V4V @ 250μA11800pF @ 25V180A Tc183nC @ 10V60V10V±20V180AROHS3 Compliant--------------------
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4 WeeksCable-----ActiveNot Applicable------------------Non-RoHS CompliantMetal, Plastic71g2005Ergonomic, Twist Cut-OffRed75mm156mmNo SVHCNo----------
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-Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ F7Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH275Single315W TcN-Channel2.1m Ω @ 90A, 10V4.5V @ 250μA13600pF @ 50V180A Tc193nC @ 10V80V10V±20V180AROHS3 Compliant---------ACTIVE (Last Updated: 7 months ago)---------
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20 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)-55°C~175°C TJTape & Reel (TR)DeepGATE™, STripFET™ VIActive1 (Unlimited)EAR99FET General Purpose PowersMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH260-300W TcN-Channel2.4m Ω @ 60A, 10V4V @ 250μA11800pF @ 25V180A Tc183nC @ 10V-10V±20V180AROHS3 Compliant-1.59999g-------ACTIVE (Last Updated: 7 months ago)1.7mOhm1Single31.4 ns165ns62.6 ns144.4 ns20V60V
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