STMicroelectronics STH260N6F6-6
- Part Number:
- STH260N6F6-6
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2479354-STH260N6F6-6
- Description:
- MOSFET N-CH 60V 180A H2PAK-6
- Datasheet:
- STH260N6F6-6
STMicroelectronics STH260N6F6-6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STH260N6F6-6.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab)
- Weight1.59999g
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesDeepGATE™, STripFET™ VI
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Resistance1.7mOhm
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTH260
- Number of Channels1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Turn On Delay Time31.4 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.4m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds11800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs183nC @ 10V
- Rise Time165ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)62.6 ns
- Turn-Off Delay Time144.4 ns
- Continuous Drain Current (ID)180A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- RoHS StatusROHS3 Compliant
STH260N6F6-6 Overview
A device's maximum input capacitance is 11800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 144.4 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STH260N6F6-6 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 144.4 ns
STH260N6F6-6 Applications
There are a lot of STMicroelectronics
STH260N6F6-6 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 11800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 144.4 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STH260N6F6-6 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 144.4 ns
STH260N6F6-6 Applications
There are a lot of STMicroelectronics
STH260N6F6-6 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STH260N6F6-6 More Descriptions
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) H2PAK T/R
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and ReelSTMicroelectronics SCT
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 180A 7-Pin(6 Tab) H2PAK T/R
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and ReelSTMicroelectronics SCT
The three parts on the right have similar specifications to STH260N6F6-6.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseWeightOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeResistanceSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusMaterialPublishedFeatureColorHeightLengthREACH SVHCRadiation HardeningConfigurationDrain to Source Voltage (Vdss)View Compare
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STH260N6F6-6ACTIVE (Last Updated: 7 months ago)20 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)1.59999g-55°C~175°C TJTape & Reel (TR)DeepGATE™, STripFET™ VIActive1 (Unlimited)EAR991.7mOhmFET General Purpose PowersMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH2601300W TcSingle31.4 nsN-Channel2.4m Ω @ 60A, 10V4V @ 250μA11800pF @ 25V180A Tc183nC @ 10V165ns10V±20V62.6 ns144.4 ns180A20V60VROHS3 Compliant-----------
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-4 WeeksCable--71g---ActiveNot Applicable-------------------------Non-RoHS CompliantMetal, Plastic2005Ergonomic, Twist Cut-OffRed75mm156mmNo SVHCNo--
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ACTIVE (Last Updated: 7 months ago)-Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)--55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ F7Active1 (Unlimited)EAR99-FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH275-315W Tc--N-Channel2.1m Ω @ 90A, 10V4.5V @ 250μA13600pF @ 50V180A Tc193nC @ 10V-10V±20V--180A--ROHS3 Compliant--------Single80V
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-20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ F6Active1 (Unlimited)EAR99-FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH265-300W Tc--N-Channel2.1m Ω @ 60A, 10V4V @ 250μA11800pF @ 25V180A Tc183nC @ 10V-10V±20V--180A--ROHS3 Compliant--------Single60V
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