STMicroelectronics STH290N4F6-2AG

Name: STH290N4F6-2AG
Brand: STMicroelectronics
SKU: 5037075-STH290N4F6-2AG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STH290N4F6-2AG

Manufacturer:: STMicroelectronics

Ventron No:: 5037075-STH290N4F6-2AG

Description:: MOSFET N-CH 40V 180A H2PAK-2

ECAD Model:

Datasheet:: STH290N4F6-2AG

Specifications

STMicroelectronics STH290N4F6-2AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STH290N4F6-2AG.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, STripFET™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STH290
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.7m Ω @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7380pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
115nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
180A
Drain-source On Resistance-Max
0.0017Ohm
Pulsed Drain Current-Max (IDM)
720A
DS Breakdown Voltage-Min
40V
RoHS Status
ROHS3 Compliant

Description

STH290N4F6-2AG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7380pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 720A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STH290N4F6-2AG Features
a continuous drain current (ID) of 180A
based on its rated peak drain current 720A.
a 40V drain to source voltage (Vdss)

STH290N4F6-2AG Applications
There are a lot of STMicroelectronics
STH290N4F6-2AG applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STH290N4F6-2AG More Descriptions

Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
Lv Mosfet Trench |Stmicroelectronics STH290N4F6-2AG
Automotive Power Discrete, 40V, 180A, H2PAK-2, Tape and ReelSTMicroelectronics SCT
Power Field-Effect Transistor, 180A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CAP CERAMIC DISK RDL LONG LEADS

Product Comparison

The three parts on the right have similar specifications to STH290N4F6-2AG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Subcategory

Weight

Resistance

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

View Compare
STH290N4F6-2AG

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

20 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, STripFET™

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

STH290

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.7m Ω @ 45A, 10V

4V @ 250μA

7380pF @ 25V

180A Tc

115nC @ 10V

40V

10V

±20V

180A

0.0017Ohm

720A

40V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
STH275N8F7-6AG

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

-

Surface Mount

Surface Mount

TO-263-7, D2Pak (6 Leads Tab)

-

-55°C~175°C TJ

Cut Tape (CT)

Automotive, AEC-Q101, STripFET™ F7

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

STH275

-

-

Single

315W Tc

-

-

N-Channel

-

2.1m Ω @ 90A, 10V

4.5V @ 250μA

13600pF @ 50V

180A Tc

193nC @ 10V

80V

10V

±20V

180A

-

-

-

ROHS3 Compliant

FET General Purpose Power

-

-

-

-

-

-

-

-

-

-

STH290N4F6-2AG vs STH275N8F7-6AG
STH265N6F6-2AG

STMicroelectronics

-

20 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Cut Tape (CT)

Automotive, AEC-Q101, STripFET™ F6

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

STH265

-

-

Single

300W Tc

-

-

N-Channel

-

2.1m Ω @ 60A, 10V

4V @ 250μA

11800pF @ 25V

180A Tc

183nC @ 10V

60V

10V

±20V

180A

-

-

-

ROHS3 Compliant

FET General Purpose Power

-

-

-

-

-

-

-

-

-

-

STH290N4F6-2AG vs STH265N6F6-2AG
STH260N6F6-6

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

20 Weeks

Surface Mount

Surface Mount

TO-263-7, D2Pak (6 Leads Tab)

-

-55°C~175°C TJ

Tape & Reel (TR)

DeepGATE™, STripFET™ VI

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

STH260

-

-

-

300W Tc

-

-

N-Channel

-

2.4m Ω @ 60A, 10V

4V @ 250μA

11800pF @ 25V

180A Tc

183nC @ 10V

-

10V

±20V

180A

-

-

-

ROHS3 Compliant

FET General Purpose Powers

1.59999g

1.7mOhm

1

Single

31.4 ns

165ns

62.6 ns

144.4 ns

20V

60V

STH290N4F6-2AG vs STH260N6F6-6