STMicroelectronics STH275N8F7-6AG
- Part Number:
- STH275N8F7-6AG
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2485060-STH275N8F7-6AG
- Description:
- MOSFET N-CH 80V 180A H2PAK-6
- Datasheet:
- STH275N8F7-6AG
STMicroelectronics STH275N8F7-6AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STH275N8F7-6AG.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab)
- Operating Temperature-55°C~175°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101, STripFET™ F7
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTH275
- ConfigurationSingle
- Power Dissipation-Max315W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.1m Ω @ 90A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds13600pF @ 50V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs193nC @ 10V
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)180A
- RoHS StatusROHS3 Compliant
STH275N8F7-6AG Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13600pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 80V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STH275N8F7-6AG Features
a continuous drain current (ID) of 180A
a 80V drain to source voltage (Vdss)
STH275N8F7-6AG Applications
There are a lot of STMicroelectronics
STH275N8F7-6AG applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13600pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 80V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STH275N8F7-6AG Features
a continuous drain current (ID) of 180A
a 80V drain to source voltage (Vdss)
STH275N8F7-6AG Applications
There are a lot of STMicroelectronics
STH275N8F7-6AG applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
STH275N8F7-6AG More Descriptions
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Power MOSFET, N Channel, 80 V, 180 A, 2.1 Milliohms, H2PAK-6, 7 Pins, Surface Mount
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6 Tab) H2PAK T/R
Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
MOSFET, AEC-Q101, N-CH, 80V, 180A; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:80V; On Resistance
MOSFET, AEC-Q101, N-CH, 80V, 180A; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 315W; Transistor Case Style: H2PAK-6; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power MOSFET, N Channel, 80 V, 180 A, 2.1 Milliohms, H2PAK-6, 7 Pins, Surface Mount
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6 Tab) H2PAK T/R
Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
MOSFET, AEC-Q101, N-CH, 80V, 180A; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:80V; On Resistance
MOSFET, AEC-Q101, N-CH, 80V, 180A; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 315W; Transistor Case Style: H2PAK-6; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to STH275N8F7-6AG.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusFactory Lead TimeMaterialWeightPublishedFeatureColorHeightLengthREACH SVHCRadiation HardeningResistanceNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageView Compare
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STH275N8F7-6AGACTIVE (Last Updated: 7 months ago)Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ F7Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH275Single315W TcN-Channel2.1m Ω @ 90A, 10V4.5V @ 250μA13600pF @ 50V180A Tc193nC @ 10V80V10V±20V180AROHS3 Compliant--------------------
-
-Cable-----ActiveNot Applicable------------------Non-RoHS Compliant4 WeeksMetal, Plastic71g2005Ergonomic, Twist Cut-OffRed75mm156mmNo SVHCNo---------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™ F6Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH265Single300W TcN-Channel2.1m Ω @ 60A, 10V4V @ 250μA11800pF @ 25V180A Tc183nC @ 10V60V10V±20V180AROHS3 Compliant20 Weeks------------------
-
ACTIVE (Last Updated: 7 months ago)Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)-55°C~175°C TJTape & Reel (TR)DeepGATE™, STripFET™ VIActive1 (Unlimited)EAR99FET General Purpose PowersMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTH260-300W TcN-Channel2.4m Ω @ 60A, 10V4V @ 250μA11800pF @ 25V180A Tc183nC @ 10V-10V±20V180AROHS3 Compliant20 Weeks-1.59999g-------1.7mOhm1Single31.4 ns165ns62.6 ns144.4 ns20V60V
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