STMicroelectronics STD9NM60N

Name: STD9NM60N
Brand: STMicroelectronics
SKU: 2478717-STD9NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD9NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2478717-STD9NM60N

Description:: MOSFET N-CH 600V 6.5A DPAK

ECAD Model:

Datasheet:: STD9NM60N

Specifications

STMicroelectronics STD9NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD9NM60N.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
745mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD9N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
70W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
745m Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
452pF @ 50V
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Gate Charge (Qg) (Max) @ Vgs
17.4nC @ 10V
Rise Time
23ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
26.7 ns
Turn-Off Delay Time
52.5 ns
Continuous Drain Current (ID)
6.5A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
26A
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD9NM60N Description
The second generation of MDmeshTM technology is used to create this range of devices. This ground-breaking Power MOSFET combines a new vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.

STD9NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

STD9NM60N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STD9NM60N More Descriptions

N-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFET
N-Channel 600 V 745 mOhm Surface Mount MDmesh II Power MosFet - TO-252-3
MOSFET, N CH, 600V, 6.5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.63ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Product Comparison

The three parts on the right have similar specifications to STD9NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Voltage - Rated DC

Current Rating

Qualification Status

Element Configuration

Case Connection

Avalanche Energy Rating (Eas)

Drain to Source Voltage (Vdss)

View Compare
STD9NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Active

1 (Unlimited)

2

EAR99

745mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

STD9N

3

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

70W Tc

ENHANCEMENT MODE

70W

28 ns

N-Channel

SWITCHING

745m Ω @ 3.25A, 10V

4V @ 250μA

452pF @ 50V

6.5A Tc

17.4nC @ 10V

23ns

10V

±25V

26.7 ns

52.5 ns

6.5A

3V

25V

9A

600V

26A

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STD90N02L

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

6mOhm

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

STD90

3

R-PSSO-G2

1

-

70W Tc

ENHANCEMENT MODE

70W

-

N-Channel

SWITCHING

6m Ω @ 30A, 10V

1.8V @ 250μA

2050pF @ 16V

60A Tc

22nC @ 5V

110ns

5V 10V

±20V

8 ns

18 ns

60A

-

20V

-

25V

240A

-

-

-

-

-

ROHS3 Compliant

Lead Free

LOW THRESHOLD

24V

60A

Not Qualified

Single

DRAIN

-

-

STD9NM60N vs STD90N02L
STD9NM50N

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

-

Active

1 (Unlimited)

2

EAR99

560mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

-

-

STD9N

3

R-PSSO-G2

1

-

45W Tc

ENHANCEMENT MODE

70W

7 ns

N-Channel

SWITCHING

790m Ω @ 2.5A, 10V

4V @ 250μA

570pF @ 50V

5A Tc

14nC @ 10V

16ns

10V

±25V

19 ns

45 ns

5A

-

25V

-

500V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

Single

-

150 mJ

-

STD9NM60N vs STD9NM50N
STD9N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

2

-

150°C TJ

Cut Tape (CT)

MDmesh™ II Plus

-

Active

1 (Unlimited)

-

EAR99

780mOhm

-

-

MOSFET (Metal Oxide)

-

-

-

-

STD9N

-

-

-

-

60W Tc

-

60W

8.8 ns

N-Channel

-

780m Ω @ 3A, 10V

4V @ 250μA

320pF @ 100V

5.5A Tc

10nC @ 10V

7.5ns

10V

±25V

13.5 ns

22 ns

5.5A

-

25V

-

650V

-

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

Single

-

-

600V

STD9NM60N vs STD9N60M2