STMicroelectronics STD86N3LH5
- Part Number:
- STD86N3LH5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483504-STD86N3LH5
- Description:
- MOSFET N-CH 30V 80A DPAK
- Datasheet:
- STD86N3LH5
STMicroelectronics STD86N3LH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD86N3LH5.
- Package / CaseTO252
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
STD86N3LH5 Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet STD86N3LH5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of STD86N3LH5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet STD86N3LH5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of STD86N3LH5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
STD86N3LH5 More Descriptions
STD86N3LH5 Series 30 V 0.005 Ohm 80 A N-Channel STripFET H5 Power Mosfet-DPAK-3
Mosfet, Aec-Q101, N-Ch, 30V, To-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Stmicroelectronics STD86N3LH5
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, Aec-Q101, N-Ch, 30V, To-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Stmicroelectronics STD86N3LH5
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The three parts on the right have similar specifications to STD86N3LH5.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMountMounting TypeNumber of PinsOperating TemperatureSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeResistanceSubcategoryTechnologyBase Part NumberNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningLead FreeLifecycle StatusTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinJESD-609 CodePbfree CodeTerminationTerminal FinishAdditional FeatureReach Compliance CodePin CountQualification StatusRise TimeFall Time (Typ)Turn-Off Delay TimeDrain Current-Max (Abs) (ID)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsREACH SVHCView Compare
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STD86N3LH5TO252Tape & Reel (TR)RoHS Compliant------------------------------------------------------------------
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)ROHS3 CompliantSurface MountSurface Mount3-55°C~175°C TJAutomotive, AEC-Q101, DeepGATE™, STripFET™ VIObsolete1 (Unlimited)EAR995mOhmFET General Purpose PowersMOSFET (Metal Oxide)STD801120W TcSingle120WN-Channel6.5m Ω @ 40A, 10V4.5V @ 250μA7480pF @ 25V80A Tc122nC @ 10V10V±20V80A20V60V4.6mm10.4mm9.35mmNoLead Free---------------------------------
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)ROHS3 CompliantSurface MountSurface Mount--55°C~175°C TJAutomotive, AEC-Q101, STripFET™Active1 (Unlimited)EAR99--MOSFET (Metal Oxide)STD85-85W Tc--N-Channel10m Ω @ 40A, 10V4.5V @ 250μA3100pF @ 50V70A Tc45nC @ 10V10V±20V70A------Lead FreeACTIVE (Last Updated: 8 months ago)SILICON2SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING100V0.01Ohm280A100V----------------
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TO-251-3 Short Leads, IPak, TO-251AATubeROHS3 CompliantThrough HoleThrough Hole3-55°C~150°C TJMDmesh™ IIObsolete1 (Unlimited)EAR99-FET General Purpose PowerMOSFET (Metal Oxide)STD8N-70W TcSingle70WN-Channel650m Ω @ 3.5A, 10V4V @ 250μA560pF @ 50V7A Tc19nC @ 10V10V±25V3.5A25V600V------SILICON3--26030-1-ENHANCEMENT MODE-SWITCHING-0.65Ohm28A-e3yesThrough HoleMatte Tin (Sn)AVALANCHE RATEDnot_compliant3Not Qualified12ns10 ns40 ns7A600V200 mJ3 VNo SVHC
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