STMicroelectronics STD4NK80ZT4

Name: STD4NK80ZT4
Brand: STMicroelectronics
SKU: 2477864-STD4NK80ZT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD4NK80ZT4

Manufacturer:: STMicroelectronics

Ventron No:: 2477864-STD4NK80ZT4

Description:: MOSFET N-CH 800V 3A DPAK

ECAD Model:

Datasheet:: ST(D,P)4NK80Z(-1,FP)

Specifications

STMicroelectronics STD4NK80ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD4NK80ZT4.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3.5Ohm
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD4N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
80W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
80W
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
575pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A Tc
Gate Charge (Qg) (Max) @ Vgs
22.5nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
1.5A
Threshold Voltage
3V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
800V
Max Junction Temperature (Tj)
150°C
Height
2.63mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD4NK80ZT4 Description
STD4NK80ZT4 is a type of Zener-protected SuperMESH? power MOSFET provided by STMicroelectronics based on the well-established strip-based PowerMESH? layout. It is able to minimize on-state resistance while ensuring a very good dv/dt capability for the most demanding applications.

STD4NK80ZT4 Features
Extremely high dv/dt capability
100% avalanche tested
Low gate charge
Low intrinsic capacitances
Available in the DPAK package

STD4NK80ZT4 Applications
Switching applications

STD4NK80ZT4 More Descriptions

N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
Power Mosfet, N Channel, 1.5 A, 800 V, 3 Ohm, 10 V, 3.75 V |Stmicroelectronics STD4NK80ZT4
N-Channel 800 V 3.5 O 80 W Surface Mount SuperMESH Power MosFet - TO-252
MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Source Voltage Vds:800V; On Resistance
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STD4NK80ZT4.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

Qualification Status

Dual Supply Voltage

Nominal Vgs

Lifecycle Status

Termination

View Compare
STD4NK80ZT4

STMicroelectronics

12 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

EAR99

3.5Ohm

AVALANCHE RATED

FET General Purpose Power

800V

MOSFET (Metal Oxide)

GULL WING

260

3A

30

STD4N

3

R-PSSO-G2

1

1

80W Tc

Single

ENHANCEMENT MODE

80W

13 ns

N-Channel

SWITCHING

3.5 Ω @ 1.5A, 10V

4.5V @ 50μA

575pF @ 25V

3A Tc

22.5nC @ 10V

12ns

10V

±30V

32 ns

35 ns

1.5A

3V

TO-252AA

30V

3A

800V

150°C

2.63mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STD4NS25T4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

2

EAR99

-

-

FET General Purpose Power

250V

MOSFET (Metal Oxide)

GULL WING

260

4A

30

STD4N

3

R-PSSO-G2

1

-

50W Tc

Single

ENHANCEMENT MODE

50W

-

N-Channel

SWITCHING

1.1 Ω @ 2A, 10V

4V @ 250μA

355pF @ 25V

4A Tc

27nC @ 10V

18ns

10V

±20V

10.5 ns

12 ns

4A

3V

-

20V

4A

250V

-

-

-

6.8mm

No SVHC

-

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

not_compliant

Not Qualified

250V

3 V

-

-

STD4NK80ZT4 vs STD4NS25T4
STD4NK60Z-1

STMicroelectronics

-

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

2Ohm

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

260

-

30

STD4N

3

-

1

-

70W Tc

Single

ENHANCEMENT MODE

70W

12 ns

N-Channel

SWITCHING

2 Ω @ 2A, 10V

4.5V @ 50μA

510pF @ 25V

4A Tc

26nC @ 10V

9.5ns

10V

±30V

16.5 ns

29 ns

4A

-

-

30V

4A

600V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn) - annealed

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

-

STD4NK80ZT4 vs STD4NK60Z-1
STD4NK50ZD

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Obsolete

1 (Unlimited)

2

EAR99

2.7Ohm

-

FET General Purpose Power

500V

MOSFET (Metal Oxide)

GULL WING

260

3A

30

STD4N

3

R-PSSO-G2

1

-

45W Tc

Single

ENHANCEMENT MODE

45W

9.5 ns

N-Channel

SWITCHING

2.7 Ω @ 1.5A, 10V

4.5V @ 50μA

310pF @ 25V

3A Tc

12nC @ 10V

15.5ns

10V

±30V

22 ns

23 ns

3A

-

-

30V

3A

500V

-

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

Matte Tin (Sn) - annealed

not_compliant

Not Qualified

500V

2.3 V

-

SMD/SMT

STD4NK80ZT4 vs STD4NK50ZD