STD4NK80Z-1

STMicroelectronics STD4NK80Z-1

Part Number:
STD4NK80Z-1
Manufacturer:
STMicroelectronics
Ventron No:
2479360-STD4NK80Z-1
Description:
MOSFET N-CH 800V 3A IPAK
ECAD Model:
Datasheet:
ST(D,P)4NK80Z(-1,FP)

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STD4NK80Z-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD4NK80Z-1.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD4N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    80W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    80W
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    575pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22.5nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    3A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    3A
  • Drain to Source Breakdown Voltage
    800V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STD4NK80Z-1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 575pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).

STD4NK80Z-1 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 35 ns


STD4NK80Z-1 Applications
There are a lot of STMicroelectronics
STD4NK80Z-1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STD4NK80Z-1 More Descriptions
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK packageCiiva Crawler
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Product Comparison
The three parts on the right have similar specifications to STD4NK80Z-1.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    RoHS Status
    Resistance
    JESD-30 Code
    Lead Free
    Termination
    Voltage - Rated DC
    Terminal Form
    Reach Compliance Code
    Current Rating
    Qualification Status
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Case Connection
    Threshold Voltage
    JEDEC-95 Code
    Avalanche Energy Rating (Eas)
    View Compare
  • STD4NK80Z-1
    STD4NK80Z-1
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD4N
    3
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    13 ns
    N-Channel
    SWITCHING
    3.5 Ω @ 1.5A, 10V
    4.5V @ 50μA
    575pF @ 25V
    3A Tc
    22.5nC @ 10V
    12ns
    10V
    ±30V
    32 ns
    35 ns
    3A
    30V
    3A
    800V
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD4N52K3
    ACTIVE (Last Updated: 8 months ago)
    -
    Surface Mount, Through Hole
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    8
    SILICON
    150°C TJ
    Cut Tape (CT)
    SuperMESH3™
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    -
    STD4N
    3
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    70W
    8 ns
    N-Channel
    SWITCHING
    2.6 Ω @ 1.25A, 10V
    4.5V @ 50μA
    334pF @ 100V
    2.5A Tc
    2nC @ 10V
    7ns
    10V
    ±30V
    14 ns
    21 ns
    2.5A
    30V
    -
    525V
    No
    ROHS3 Compliant
    2.6Ohm
    R-PSIP-T3
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD4NK50ZD
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD4N
    3
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    9.5 ns
    N-Channel
    SWITCHING
    2.7 Ω @ 1.5A, 10V
    4.5V @ 50μA
    310pF @ 25V
    3A Tc
    12nC @ 10V
    15.5ns
    10V
    ±30V
    22 ns
    23 ns
    3A
    30V
    3A
    500V
    -
    ROHS3 Compliant
    2.7Ohm
    R-PSSO-G2
    Lead Free
    SMD/SMT
    500V
    GULL WING
    not_compliant
    3A
    Not Qualified
    500V
    2.3 V
    No SVHC
    -
    -
    -
    -
  • STD40NF03LT4
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD40
    3
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    22 ns
    N-Channel
    SWITCHING
    11m Ω @ 20A, 10V
    1V @ 250μA
    1440pF @ 25V
    40A Tc
    30nC @ 5V
    165ns
    5V 10V
    ±20V
    25 ns
    21 ns
    20A
    20V
    -
    30V
    No
    ROHS3 Compliant
    -
    R-PSSO-G2
    Lead Free
    -
    30V
    GULL WING
    -
    40A
    -
    -
    -
    No SVHC
    DRAIN
    1V
    TO-252AA
    850 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.