STMicroelectronics STD4NK80Z-1
- Part Number:
- STD4NK80Z-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2479360-STD4NK80Z-1
- Description:
- MOSFET N-CH 800V 3A IPAK
- Datasheet:
- ST(D,P)4NK80Z(-1,FP)
STMicroelectronics STD4NK80Z-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD4NK80Z-1.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD4N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max80W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation80W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5 Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds575pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3A Tc
- Gate Charge (Qg) (Max) @ Vgs22.5nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)3A
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)3A
- Drain to Source Breakdown Voltage800V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STD4NK80Z-1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 575pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STD4NK80Z-1 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 35 ns
STD4NK80Z-1 Applications
There are a lot of STMicroelectronics
STD4NK80Z-1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 575pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STD4NK80Z-1 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 35 ns
STD4NK80Z-1 Applications
There are a lot of STMicroelectronics
STD4NK80Z-1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STD4NK80Z-1 More Descriptions
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK packageCiiva Crawler
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK packageCiiva Crawler
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
The three parts on the right have similar specifications to STD4NK80Z-1.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusResistanceJESD-30 CodeLead FreeTerminationVoltage - Rated DCTerminal FormReach Compliance CodeCurrent RatingQualification StatusDual Supply VoltageNominal VgsREACH SVHCCase ConnectionThreshold VoltageJEDEC-95 CodeAvalanche Energy Rating (Eas)View Compare
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STD4NK80Z-1ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)26030STD4N3180W TcSingleENHANCEMENT MODE80W13 nsN-ChannelSWITCHING3.5 Ω @ 1.5A, 10V4.5V @ 50μA575pF @ 25V3A Tc22.5nC @ 10V12ns10V±30V32 ns35 ns3A30V3A800VNoROHS3 Compliant-----------------
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ACTIVE (Last Updated: 8 months ago)-Surface Mount, Through HoleSurface MountTO-252-3, DPak (2 Leads Tab), SC-638SILICON150°C TJCut Tape (CT)SuperMESH3™e3Discontinued1 (Unlimited)3EAR99Matte Tin (Sn) - annealedULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)260-STD4N3145W TcSingleENHANCEMENT MODE70W8 nsN-ChannelSWITCHING2.6 Ω @ 1.25A, 10V4.5V @ 50μA334pF @ 100V2.5A Tc2nC @ 10V7ns10V±30V14 ns21 ns2.5A30V-525VNoROHS3 Compliant2.6OhmR-PSIP-T3Lead Free-------------
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - annealed-FET General Purpose PowerMOSFET (Metal Oxide)26030STD4N3145W TcSingleENHANCEMENT MODE45W9.5 nsN-ChannelSWITCHING2.7 Ω @ 1.5A, 10V4.5V @ 50μA310pF @ 25V3A Tc12nC @ 10V15.5ns10V±30V22 ns23 ns3A30V3A500V-ROHS3 Compliant2.7OhmR-PSSO-G2Lead FreeSMD/SMT500VGULL WINGnot_compliant3ANot Qualified500V2.3 VNo SVHC----
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIe3Not For New Designs1 (Unlimited)2EAR99Matte Tin (Sn) - annealedLOGIC LEVEL COMPATIBLE, LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)26030STD403180W TcSingleENHANCEMENT MODE80W22 nsN-ChannelSWITCHING11m Ω @ 20A, 10V1V @ 250μA1440pF @ 25V40A Tc30nC @ 5V165ns5V 10V±20V25 ns21 ns20A20V-30VNoROHS3 Compliant-R-PSSO-G2Lead Free-30VGULL WING-40A---No SVHCDRAIN1VTO-252AA850 mJ
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