STMicroelectronics STD4N62K3

Name: STD4N62K3
Brand: STMicroelectronics
SKU: 2481921-STD4N62K3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD4N62K3

Manufacturer:: STMicroelectronics

Ventron No:: 2481921-STD4N62K3

Description:: MOSFET N-CH 620V 3.8A DPAK

ECAD Model:

Datasheet:: STD4N62K3

Specifications

STMicroelectronics STD4N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD4N62K3.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
SuperMESH3™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
1.95Ohm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STD4N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.95 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 50V
Current - Continuous Drain (Id) @ 25°C
3.8A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
3.8A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
620V
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD4N62K3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 450pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=620V. And this device has 620V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STD4N62K3 Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 29 ns
a threshold voltage of 3.75V

STD4N62K3 Applications
There are a lot of STMicroelectronics
STD4N62K3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STD4N62K3 More Descriptions

N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-Channel 620 V 1.95 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3
MOSFET, N CH, 620V, 3.8A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Pow
Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
PANASONIC ELECTRONIC COMPONENTS 6TAE150M Surface Mount Tantalum Capacitor, 150 F, 6.3 V, TA Series, 2917 [7343 Metric], -55 C

Product Comparison

The three parts on the right have similar specifications to STD4N62K3.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Form

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

Number of Channels

Case Connection

JESD-609 Code

Terminal Finish

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Nominal Vgs

Additional Feature

View Compare
STD4N62K3

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Cut Tape (CT)

SuperMESH3™

Active

1 (Unlimited)

2

EAR99

1.95Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD4N

3

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

10 ns

N-Channel

SWITCHING

1.95 Ω @ 1.9A, 10V

4.5V @ 50μA

450pF @ 50V

3.8A Tc

14nC @ 10V

9ns

10V

±30V

19 ns

29 ns

3.8A

3.75V

30V

620V

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD45N10F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

52 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

DeepGATE™, STripFET™ VII

Active

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

GULL WING

STD45

-

R-PSSO-G2

1

60W Tc

Single

ENHANCEMENT MODE

-

15 ns

N-Channel

SWITCHING

18m Ω @ 22.5A, 10V

4.5V @ 250μA

1640pF @ 50V

45A Tc

25nC @ 10V

17ns

10V

-

8 ns

24 ns

45A

-

20V

100V

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

3.949996g

1

DRAIN

-

-

-

-

-

-

-

-

-

-

-

-

STD4N62K3 vs STD45N10F7
STD4NS25T4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MESH OVERLAY™

Obsolete

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STD4N

3

R-PSSO-G2

1

50W Tc

Single

ENHANCEMENT MODE

50W

-

N-Channel

SWITCHING

1.1 Ω @ 2A, 10V

4V @ 250μA

355pF @ 25V

4A Tc

27nC @ 10V

18ns

10V

±20V

10.5 ns

12 ns

4A

3V

20V

250V

-

-

6.8mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

-

e3

Matte Tin (Sn)

250V

260

not_compliant

4A

30

Not Qualified

4A

250V

3 V

-

STD4N62K3 vs STD4NS25T4
STD4N52K3

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount, Through Hole

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

8

SILICON

150°C TJ

Cut Tape (CT)

SuperMESH3™

Discontinued

1 (Unlimited)

3

EAR99

2.6Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

-

STD4N

3

R-PSIP-T3

1

45W Tc

Single

ENHANCEMENT MODE

70W

8 ns

N-Channel

SWITCHING

2.6 Ω @ 1.25A, 10V

4.5V @ 50μA

334pF @ 100V

2.5A Tc

2nC @ 10V

7ns

10V

±30V

14 ns

21 ns

2.5A

-

30V

525V

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

e3

Matte Tin (Sn) - annealed

-

260

-

-

-

-

-

-

-

ULTRA-LOW RESISTANCE

STD4N62K3 vs STD4N52K3