STMicroelectronics STD3NK50ZT4

Name: STD3NK50ZT4
Brand: STMicroelectronics
SKU: 2487957-STD3NK50ZT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD3NK50ZT4

Manufacturer:: STMicroelectronics

Ventron No:: 2487957-STD3NK50ZT4

Description:: MOSFET N-CH 500V 2.3A DPAK

ECAD Model:

Datasheet:: ST(D,Q)3NK50Z(R-AP,-1)

Specifications

STMicroelectronics STD3NK50ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD3NK50ZT4.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3.3Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2.3A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD3N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.3 Ω @ 1.15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
280pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.3A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
2.3A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
9.2A
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

STD3NK50ZT4 Description The SuperMESHTM series is created by optimizing ST's well-known strip-based PowerMESHTM layout to extremes. In addition to significantly lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.

STD3NK50ZT4 Features
Typical RDS(on) = 2.8?
100% avalanche tested
Gate charge minimized
100% avalanche tested
New high voltage benchmark
Extremely high dv/dt capability

STD3NK50ZT4 Applications
Lighting
AC adaptors and battery chargers
Switch-mode power supplies(SMPS)

STD3NK50ZT4 More Descriptions

N-CHANNEL 500V - 2.8 Ohm - 2.3A Zener-Protected SuperMESH MOSFET
Trans MOSFET N-CH 500V 2.3A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 500V 2.3A DPAK
N-channel 500 V, 2.8 Ohm typ., 2.3 A SuperMESH Power MOSFET in a DPAK packageCiiva Crawler
Mosfet, N To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:500V; On Resistance Rds(On):3.3Ohm; Rds(On) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Transistor Case Style:To-252; Rohs Compliant: No |Stmicroelectronics STD3NK50ZT4
Power Field-Effect Transistor, 2.3A I(D), 500V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Product Comparison

The three parts on the right have similar specifications to STD3NK50ZT4.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Reach Compliance Code

Qualification Status

Threshold Voltage

Drain Current-Max (Abs) (ID)

REACH SVHC

Additional Feature

Case Connection

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

View Compare
STD3NK50ZT4

STMicroelectronics

12 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

EAR99

3.3Ohm

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

GULL WING

260

2.3A

30

STD3N

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

8 ns

N-Channel

SWITCHING

3.3 Ω @ 1.15A, 10V

4.5V @ 50μA

280pF @ 25V

2.3A Tc

15nC @ 10V

13ns

10V

±30V

14 ns

24 ns

2.3A

TO-252AA

30V

500V

9.2A

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-
STD3NK90ZT4

STMicroelectronics

12 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

EAR99

4.8Ohm

Matte Tin (Sn)

FET General Purpose Power

900V

MOSFET (Metal Oxide)

GULL WING

260

3A

30

STD3N

3

R-PSSO-G2

1

90W Tc

Single

ENHANCEMENT MODE

90W

18 ns

N-Channel

SWITCHING

4.8 Ω @ 1.5A, 10V

4.5V @ 50μA

590pF @ 25V

3A Tc

22.7nC @ 10V

7ns

10V

±30V

18 ns

45 ns

3A

TO-252AA

30V

900V

-

2.4mm

6.6mm

6.2mm

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

not_compliant

Not Qualified

3.75V

3A

No SVHC

-

-

-

-

STD3NK50ZT4 vs STD3NK90ZT4
STD30NF03LT4

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

25mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

30V

MOSFET (Metal Oxide)

GULL WING

260

30A

30

STD30N

3

R-PSSO-G2

1

50W Tc

Single

ENHANCEMENT MODE

50W

35 ns

N-Channel

SWITCHING

25m Ω @ 15A, 10V

2.5V @ 250μA

830pF @ 25V

30A Tc

18nC @ 5V

205ns

4.5V 10V

±20V

240 ns

90 ns

30A

-

20V

30V

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

1.7V

-

No SVHC

LOW THRESHOLD

DRAIN

-

-

STD3NK50ZT4 vs STD30NF03LT4
STD36NH02L

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

STD36

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

N-Channel

SWITCHING

14.5m Ω @ 15A, 10V

2.5V @ 250μA

860pF @ 15V

30A Tc

20nC @ 10V

70ns

5V 10V

±20V

15 ns

22 ns

30A

-

20V

24V

120A

-

-

-

-

ROHS3 Compliant

-

-

not_compliant

Not Qualified

-

-

-

-

DRAIN

0.026Ohm

200 mJ

STD3NK50ZT4 vs STD36NH02L