STD35P6LLF6

STMicroelectronics STD35P6LLF6

Part Number:
STD35P6LLF6
Manufacturer:
STMicroelectronics
Ventron No:
2481602-STD35P6LLF6
Description:
MOSFET P-CH 60V 35A DPAK
ECAD Model:
Datasheet:
STD35P6LLF6

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Specifications
STMicroelectronics STD35P6LLF6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD35P6LLF6.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    DPAK-0068772_type-A2
  • Operating Temperature
    175°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    STripFET™ F6
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STD35
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    70W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    51.4 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 17.5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3780pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 4.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    171 ns
  • Continuous Drain Current (ID)
    35A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.036Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Max Junction Temperature (Tj)
    175°C
  • Height
    2.63mm
  • RoHS Status
    ROHS3 Compliant
Description
STD35P6LLF6 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3780pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [171 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 51.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

STD35P6LLF6 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 171 ns


STD35P6LLF6 Applications
There are a lot of STMicroelectronics
STD35P6LLF6 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STD35P6LLF6 More Descriptions
P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package
Single P-Channel 60 V 0.036 Ohm 30 nC 70 W Silicon SMT Mosfet - TO-252-3
Mosfet, P-Ch, 60V, 35A, To-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Stmicroelectronics STD35P6LLF6
Power Field-Effect Transistor, 35A I(D), 60V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Product Comparison
The three parts on the right have similar specifications to STD35P6LLF6.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    RoHS Status
    Number of Pins
    JESD-609 Code
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Pin Count
    Element Configuration
    Rise Time
    Fall Time (Typ)
    Threshold Voltage
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Additional Feature
    Factory Lead Time
    Drain Current-Max (Abs) (ID)
    View Compare
  • STD35P6LLF6
    STD35P6LLF6
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    SILICON
    DPAK-0068772_type-A2
    175°C TJ
    Cut Tape (CT)
    STripFET™ F6
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    STD35
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    1
    70W Tc
    ENHANCEMENT MODE
    70W
    DRAIN
    51.4 ns
    P-Channel
    SWITCHING
    28m Ω @ 17.5A, 10V
    2.5V @ 250μA
    3780pF @ 25V
    35A Tc
    30nC @ 4.5V
    4.5V 10V
    ±20V
    171 ns
    35A
    20V
    0.036Ohm
    60V
    175°C
    2.63mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD3NK60ZT4
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    STD3N
    R-PSSO-G2
    1
    -
    -
    45W Tc
    ENHANCEMENT MODE
    45W
    -
    9 ns
    N-Channel
    SWITCHING
    3.6 Ω @ 1.2A, 10V
    4.5V @ 50μA
    311pF @ 25V
    2.4A Tc
    11.8nC @ 10V
    10V
    ±30V
    19 ns
    2.4A
    30V
    -
    600V
    -
    2.4mm
    ROHS3 Compliant
    3
    e3
    3.6Ohm
    Matte Tin (Sn) - annealed
    600V
    2.4A
    3
    Single
    14ns
    14 ns
    3.75V
    TO-252AA
    9.6A
    3.75 V
    6.6mm
    6.2mm
    No SVHC
    No
    Lead Free
    -
    -
    -
  • STD30NF03LT4
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    SILICON
    -
    -65°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    Obsolete
    1 (Unlimited)
    2
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    STD30N
    R-PSSO-G2
    1
    -
    -
    50W Tc
    ENHANCEMENT MODE
    50W
    DRAIN
    35 ns
    N-Channel
    SWITCHING
    25m Ω @ 15A, 10V
    2.5V @ 250μA
    830pF @ 25V
    30A Tc
    18nC @ 5V
    4.5V 10V
    ±20V
    90 ns
    30A
    20V
    -
    30V
    -
    -
    ROHS3 Compliant
    3
    e3
    25mOhm
    Matte Tin (Sn) - annealed
    30V
    30A
    3
    Single
    205ns
    240 ns
    1.7V
    -
    -
    -
    -
    -
    No SVHC
    No
    Lead Free
    LOW THRESHOLD
    -
    -
  • STD3N40K3
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH3™
    Active
    1 (Unlimited)
    -
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STD3N
    -
    1
    -
    -
    30W Tc
    -
    30W
    -
    7 ns
    N-Channel
    -
    3.4 Ω @ 900mA, 10V
    4.5V @ 50μA
    165pF @ 50V
    2A Tc
    11nC @ 10V
    10V
    ±30V
    18 ns
    2A
    30V
    -
    400V
    -
    -
    ROHS3 Compliant
    3
    -
    -
    -
    -
    -
    -
    Single
    8ns
    14 ns
    -
    -
    -
    -
    -
    -
    -
    No
    -
    -
    12 Weeks
    2A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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