STMicroelectronics STD35P6LLF6
- Part Number:
- STD35P6LLF6
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2481602-STD35P6LLF6
- Description:
- MOSFET P-CH 60V 35A DPAK
- Datasheet:
- STD35P6LLF6
STMicroelectronics STD35P6LLF6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD35P6LLF6.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierDPAK-0068772_type-A2
- Operating Temperature175°C TJ
- PackagingCut Tape (CT)
- SeriesSTripFET™ F6
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTD35
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max70W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Case ConnectionDRAIN
- Turn On Delay Time51.4 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 17.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3780pF @ 25V
- Current - Continuous Drain (Id) @ 25°C35A Tc
- Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time171 ns
- Continuous Drain Current (ID)35A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.036Ohm
- Drain to Source Breakdown Voltage60V
- Max Junction Temperature (Tj)175°C
- Height2.63mm
- RoHS StatusROHS3 Compliant
STD35P6LLF6 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3780pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [171 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 51.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
STD35P6LLF6 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 171 ns
STD35P6LLF6 Applications
There are a lot of STMicroelectronics
STD35P6LLF6 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3780pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [171 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 51.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
STD35P6LLF6 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 171 ns
STD35P6LLF6 Applications
There are a lot of STMicroelectronics
STD35P6LLF6 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STD35P6LLF6 More Descriptions
P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package
Single P-Channel 60 V 0.036 Ohm 30 nC 70 W Silicon SMT Mosfet - TO-252-3
Mosfet, P-Ch, 60V, 35A, To-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Stmicroelectronics STD35P6LLF6
Power Field-Effect Transistor, 35A I(D), 60V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Single P-Channel 60 V 0.036 Ohm 30 nC 70 W Silicon SMT Mosfet - TO-252-3
Mosfet, P-Ch, 60V, 35A, To-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Stmicroelectronics STD35P6LLF6
Power Field-Effect Transistor, 35A I(D), 60V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The three parts on the right have similar specifications to STD35P6LLF6.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRoHS StatusNumber of PinsJESD-609 CodeResistanceTerminal FinishVoltage - Rated DCCurrent RatingPin CountElement ConfigurationRise TimeFall Time (Typ)Threshold VoltageJEDEC-95 CodePulsed Drain Current-Max (IDM)Nominal VgsLengthWidthREACH SVHCRadiation HardeningLead FreeAdditional FeatureFactory Lead TimeDrain Current-Max (Abs) (ID)View Compare
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STD35P6LLF6ACTIVE (Last Updated: 8 months ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICONDPAK-0068772_type-A2175°C TJCut Tape (CT)STripFET™ F6Active1 (Unlimited)2EAR99Other TransistorsMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDSTD35R-PSSO-G21SINGLE WITH BUILT-IN DIODE170W TcENHANCEMENT MODE70WDRAIN51.4 nsP-ChannelSWITCHING28m Ω @ 17.5A, 10V2.5V @ 250μA3780pF @ 25V35A Tc30nC @ 4.5V4.5V 10V±20V171 ns35A20V0.036Ohm60V175°C2.63mmROHS3 Compliant-----------------------
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ACTIVE (Last Updated: 8 months ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON--55°C~150°C TJTape & Reel (TR)SuperMESH™Not For New Designs1 (Unlimited)2EAR99FET General Purpose PowerMOSFET (Metal Oxide)-GULL WING26030STD3NR-PSSO-G21--45W TcENHANCEMENT MODE45W-9 nsN-ChannelSWITCHING3.6 Ω @ 1.2A, 10V4.5V @ 50μA311pF @ 25V2.4A Tc11.8nC @ 10V10V±30V19 ns2.4A30V-600V-2.4mmROHS3 Compliant3e33.6OhmMatte Tin (Sn) - annealed600V2.4A3Single14ns14 ns3.75VTO-252AA9.6A3.75 V6.6mm6.2mmNo SVHCNoLead Free---
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON--65°C~175°C TJTape & Reel (TR)STripFET™ IIObsolete1 (Unlimited)2EAR99FET General Purpose PowerMOSFET (Metal Oxide)-GULL WING26030STD30NR-PSSO-G21--50W TcENHANCEMENT MODE50WDRAIN35 nsN-ChannelSWITCHING25m Ω @ 15A, 10V2.5V @ 250μA830pF @ 25V30A Tc18nC @ 5V4.5V 10V±20V90 ns30A20V-30V--ROHS3 Compliant3e325mOhmMatte Tin (Sn) - annealed30V30A3Single205ns240 ns1.7V-----No SVHCNoLead FreeLOW THRESHOLD--
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ACTIVE (Last Updated: 8 months ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~150°C TJTape & Reel (TR)SuperMESH3™Active1 (Unlimited)-EAR99FET General Purpose PowerMOSFET (Metal Oxide)----STD3N-1--30W Tc-30W-7 nsN-Channel-3.4 Ω @ 900mA, 10V4.5V @ 50μA165pF @ 50V2A Tc11nC @ 10V10V±30V18 ns2A30V-400V--ROHS3 Compliant3------Single8ns14 ns-------No--12 Weeks2A
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