STMicroelectronics STD35NF06LT4

Name: STD35NF06LT4
Brand: STMicroelectronics
SKU: 2477833-STD35NF06LT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD35NF06LT4

Manufacturer:: STMicroelectronics

Ventron No:: 2477833-STD35NF06LT4

Description:: MOSFET N-CH 60V 35A DPAK

ECAD Model:

Datasheet:: STD35NF06LT4

Specifications

STMicroelectronics STD35NF06LT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD35NF06LT4.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
17mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
35A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD35
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
80W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
80W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
33nC @ 4.5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
17.5A
Threshold Voltage
1V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
280 mJ
Max Junction Temperature (Tj)
175°C
Height
2.63mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD35NF06LT4 Description

The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
STD35NF06LT4 Features

Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability
STD35NF06LT4 Applications

Industrial
Communications & Networking,
Computers & Computer Peripherals
Automotive
Switching application

STD35NF06LT4 More Descriptions

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package
MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 60V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STD35NF06LT4.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Factory Lead Time

Drain Current-Max (Abs) (ID)

View Compare
STD35NF06LT4

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Active

1 (Unlimited)

2

EAR99

17mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

260

35A

30

STD35

3

R-PSSO-G2

1

1

80W Tc

Single

ENHANCEMENT MODE

80W

DRAIN

20 ns

N-Channel

SWITCHING

17m Ω @ 17.5A, 10V

2.5V @ 250μA

1700pF @ 25V

35A Tc

33nC @ 4.5V

100ns

4.5V 10V

±16V

20 ns

40 ns

17.5A

1V

TO-252AA

16V

60V

280 mJ

175°C

2.63mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STD35N3LH5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ V

e3

Obsolete

1 (Unlimited)

2

EAR99

16MOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

-

STD35

3

R-PSSO-G2

1

-

35W Tc

Single

ENHANCEMENT MODE

35W

DRAIN

4 ns

N-Channel

SWITCHING

16m Ω @ 15A, 10V

2.5V @ 250μA

725pF @ 25V

35A Tc

6nC @ 4.5V

4ns

4.5V 10V

±20V

3.5 ns

20 ns

35A

-

-

20V

30V

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn) - annealed

-

-

-

-

-

-

STD35NF06LT4 vs STD35N3LH5
STD36NH02L

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

STD36

3

R-PSSO-G2

1

-

45W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

-

N-Channel

SWITCHING

14.5m Ω @ 15A, 10V

2.5V @ 250μA

860pF @ 15V

30A Tc

20nC @ 10V

70ns

5V 10V

±20V

15 ns

22 ns

30A

-

-

20V

24V

200 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

not_compliant

Not Qualified

0.026Ohm

120A

-

-

STD35NF06LT4 vs STD36NH02L
STD3N40K3

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH3™

-

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STD3N

-

-

1

-

30W Tc

Single

-

30W

-

7 ns

N-Channel

-

3.4 Ω @ 900mA, 10V

4.5V @ 50μA

165pF @ 50V

2A Tc

11nC @ 10V

8ns

10V

±30V

14 ns

18 ns

2A

-

-

30V

400V

-

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

-

12 Weeks

2A

STD35NF06LT4 vs STD3N40K3