STMicroelectronics STD2N95K5

Name: STD2N95K5
Brand: STMicroelectronics
SKU: 2483865-STD2N95K5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD2N95K5

Manufacturer:: STMicroelectronics

Ventron No:: 2483865-STD2N95K5

Description:: MOSFET N-CH 950V 2A DPAK

ECAD Model:

Datasheet:: STD2N95K5

Specifications

STMicroelectronics STD2N95K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD2N95K5.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH5™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STD2N95
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
8.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
105pF @ 100V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
13.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
32.5 ns
Turn-Off Delay Time
20.5 ns
Continuous Drain Current (ID)
2A
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
2A
Drain-source On Resistance-Max
5Ohm
Drain to Source Breakdown Voltage
950V
Pulsed Drain Current-Max (IDM)
8A
Avalanche Energy Rating (Eas)
50 mJ
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD2N95K5 Description
These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH? 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications that require superior power density and high efficiency.

STD2N95K5 Features
TO-220 worldwide best RDS(on)
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected

STD2N95K5 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STD2N95K5 More Descriptions

N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
Mosfet, N-Ch, 950V, 2A, 150Deg C, 45W Rohs Compliant: Yes |Stmicroelectronics STD2N95K5
Power Field-Effect Transistor, 2A I(D), 950V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Product Comparison

The three parts on the right have similar specifications to STD2N95K5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Form

Base Part Number

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Configuration

Drain to Source Voltage (Vdss)

Vgs (Max)

Terminal Position

Pin Count

Power Dissipation

Threshold Voltage

REACH SVHC

JESD-609 Code

Terminal Finish

Voltage - Rated DC

Reach Compliance Code

Current Rating

Qualification Status

View Compare
STD2N95K5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH5™

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

STD2N95

R-PSSO-G2

1

1

45W Tc

Single

ENHANCEMENT MODE

DRAIN

8.5 ns

N-Channel

SWITCHING

5 Ω @ 1A, 10V

5V @ 100μA

105pF @ 100V

2A Tc

10nC @ 10V

13.5ns

10V

32.5 ns

20.5 ns

2A

30V

2A

5Ohm

950V

8A

50 mJ

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD2N105K5

STMicroelectronics

-

17 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™ K5

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

STD2N105

-

-

-

60W Tc

-

-

-

-

N-Channel

-

8 Ω @ 750mA, 10V

5V @ 100μA

115pF @ 100V

1.5A Tc

10nC @ 10V

-

10V

-

-

1.5A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

FET General Purpose Power

NOT SPECIFIED

NOT SPECIFIED

Single

1050V

±30V

-

-

-

-

-

-

-

-

-

-

-

STD2N95K5 vs STD2N105K5
STD25NF10LA

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

STD25N

R-PSSO-G2

1

-

100W Tc

-

ENHANCEMENT MODE

DRAIN

20 ns

N-Channel

SWITCHING

35m Ω @ 12.5A, 10V

2.5V @ 250μA

1710pF @ 25V

25A Tc

52nC @ 5V

40ns

4.5V 10V

20 ns

58 ns

25A

16V

-

0.04Ohm

-

-

450 mJ

-

-

6.8mm

No

ROHS3 Compliant

Lead Free

FET General Purpose Powers

-

-

SINGLE WITH BUILT-IN DIODE

100V

±16V

SINGLE

3

100W

2.5V

No SVHC

-

-

-

-

-

-

STD2N95K5 vs STD25NF10LA
STD2NM60T4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™

Obsolete

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

STD2N

R-PSSO-G2

1

-

46W Tc

Single

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

3.2 Ω @ 1A, 10V

5V @ 250μA

160pF @ 25V

2A Tc

8.4nC @ 10V

8ns

10V

25 ns

-

2A

30V

2A

-

600V

8A

250 mJ

-

-

-

-

ROHS3 Compliant

Lead Free

FET General Purpose Power

260

30

-

-

±30V

-

3

46W

-

-

e3

Matte Tin (Sn)

600V

not_compliant

2A

Not Qualified

STD2N95K5 vs STD2NM60T4