STMicroelectronics STD16NF06T4
- Part Number:
- STD16NF06T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2480226-STD16NF06T4
- Description:
- MOSFET N-CH 60V 16A DPAK
- Datasheet:
- STD16NF06T4
STMicroelectronics STD16NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD16NF06T4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance70MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating16A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD16
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionDRAIN
- Turn On Delay Time4 ns
- FET TypeN-Channel
- Transistor ApplicationAMPLIFIER
- Rds On (Max) @ Id, Vgs70m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs14.1nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)5.5 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)16A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)64A
- Height2.4mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD16NF06T4 Description
STD16NF06T4 is a 60v N-Channel STripFET? II Power MOSFET. The Power MOSFET STD16NF06T4 is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor STD16NF06T4 shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STD16NF06T4 Features
Typical RDS(on)=0.060Ω
100% Avalanche Tested
Exceptional dv/dt Capability
Application Oriented Characterization
STD16NF06T4 Applications
Audio Amplifiers
Power Tools
Automotive Environment
STD16NF06T4 is a 60v N-Channel STripFET? II Power MOSFET. The Power MOSFET STD16NF06T4 is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor STD16NF06T4 shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STD16NF06T4 Features
Typical RDS(on)=0.060Ω
100% Avalanche Tested
Exceptional dv/dt Capability
Application Oriented Characterization
STD16NF06T4 Applications
Audio Amplifiers
Power Tools
Automotive Environment
STD16NF06T4 More Descriptions
N-Channel 60 V 0.07 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N Ch, 60V, 16A, To-252, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Stmicroelectronics STD16NF06T4
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N Ch, 60V, 16A, To-252, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Stmicroelectronics STD16NF06T4
The three parts on the right have similar specifications to STD16NF06T4.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Factory Lead TimeContact PlatingNumber of ChannelsPbfree CodeView Compare
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STD16NF06T4ACTIVE (Last Updated: 7 months ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIe3Active1 (Unlimited)2EAR9970MOhmMatte Tin (Sn)FET General Purpose Power60VMOSFET (Metal Oxide)GULL WING26016A30STD163R-PSSO-G2140W TcSingleENHANCEMENT MODE40WDRAIN4 nsN-ChannelAMPLIFIER70m Ω @ 8A, 10V2V @ 250μA400pF @ 15V16A Tc14.1nC @ 10V15ns10V±20V5.5 ns16 ns16A2V20V60V64A2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free------
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ACTIVE (Last Updated: 8 months ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--175°C TJTape & Reel (TR)Automotive, AEC-Q101, STripFET™ F6-Active1 (Unlimited)-EAR99----MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIEDSTD15---35W Tc-----P-Channel-160m Ω @ 5A, 10V4V @ 250μA340pF @ 48V10A Tc6.4nC @ 10V-10V±20V--10A---------ROHS3 Compliant-60V----
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)MDmesh™ II Plus-Active1 (Unlimited)2EAR99600mOhm---MOSFET (Metal Oxide)GULL WING---STD10-R-PSSO-G2185W TcSingleENHANCEMENT MODE-DRAIN8.8 nsN-ChannelSWITCHING600m Ω @ 3A, 10V4V @ 250μA400pF @ 100V7.5A Tc13.5nC @ 10V8ns10V±25V13.2 ns32.5 ns7.5A-25V600V-2.4mm6.6mm6.2mm-NoROHS3 CompliantLead Free-16 WeeksTin1-
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-Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON175°C TJTubeSTripFET™ IIe3Obsolete1 (Unlimited)3EAR99200mOhmTin (Sn)Other Transistors-60VMOSFET (Metal Oxide)-260-10A30STD103-140W TcSingleENHANCEMENT MODE40WDRAIN20 nsP-ChannelSWITCHING200m Ω @ 5A, 10V4V @ 250μA850pF @ 25V10A Tc21nC @ 10V40ns10V±20V10 ns40 ns10A-20V-60V40A6.2mm6.6mm2.4mm-NoROHS3 CompliantLead Free60V---yes
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