STD16NF06T4

STMicroelectronics STD16NF06T4

Part Number:
STD16NF06T4
Manufacturer:
STMicroelectronics
Ventron No:
2480226-STD16NF06T4
Description:
MOSFET N-CH 60V 16A DPAK
ECAD Model:
Datasheet:
STD16NF06T4

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Specifications
STMicroelectronics STD16NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD16NF06T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    70MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    16A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD16
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4 ns
  • FET Type
    N-Channel
  • Transistor Application
    AMPLIFIER
  • Rds On (Max) @ Id, Vgs
    70m Ω @ 8A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14.1nC @ 10V
  • Rise Time
    15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.5 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    64A
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD16NF06T4 Description
STD16NF06T4 is a 60v N-Channel STripFET? II Power MOSFET. The Power MOSFET STD16NF06T4 is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor STD16NF06T4 shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STD16NF06T4 Features
Typical RDS(on)=0.060Ω
100% Avalanche Tested
Exceptional dv/dt Capability
Application Oriented Characterization

STD16NF06T4 Applications
Audio Amplifiers
Power Tools
Automotive Environment
STD16NF06T4 More Descriptions
N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N Ch, 60V, 16A, To-252, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Stmicroelectronics STD16NF06T4
Product Comparison
The three parts on the right have similar specifications to STD16NF06T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Factory Lead Time
    Contact Plating
    Number of Channels
    Pbfree Code
    View Compare
  • STD16NF06T4
    STD16NF06T4
    ACTIVE (Last Updated: 7 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    70MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    260
    16A
    30
    STD16
    3
    R-PSSO-G2
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    DRAIN
    4 ns
    N-Channel
    AMPLIFIER
    70m Ω @ 8A, 10V
    2V @ 250μA
    400pF @ 15V
    16A Tc
    14.1nC @ 10V
    15ns
    10V
    ±20V
    5.5 ns
    16 ns
    16A
    2V
    20V
    60V
    64A
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • STD15P6F6AG
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, STripFET™ F6
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STD15
    -
    -
    -
    35W Tc
    -
    -
    -
    -
    -
    P-Channel
    -
    160m Ω @ 5A, 10V
    4V @ 250μA
    340pF @ 48V
    10A Tc
    6.4nC @ 10V
    -
    10V
    ±20V
    -
    -
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    60V
    -
    -
    -
    -
  • STD10N60M2
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    MDmesh™ II Plus
    -
    Active
    1 (Unlimited)
    2
    EAR99
    600mOhm
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    -
    STD10
    -
    R-PSSO-G2
    1
    85W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    8.8 ns
    N-Channel
    SWITCHING
    600m Ω @ 3A, 10V
    4V @ 250μA
    400pF @ 100V
    7.5A Tc
    13.5nC @ 10V
    8ns
    10V
    ±25V
    13.2 ns
    32.5 ns
    7.5A
    -
    25V
    600V
    -
    2.4mm
    6.6mm
    6.2mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    16 Weeks
    Tin
    1
    -
  • STD10PF06-1
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    175°C TJ
    Tube
    STripFET™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    200mOhm
    Tin (Sn)
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    -
    260
    -10A
    30
    STD10
    3
    -
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    DRAIN
    20 ns
    P-Channel
    SWITCHING
    200m Ω @ 5A, 10V
    4V @ 250μA
    850pF @ 25V
    10A Tc
    21nC @ 10V
    40ns
    10V
    ±20V
    10 ns
    40 ns
    10A
    -
    20V
    -60V
    40A
    6.2mm
    6.6mm
    2.4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    60V
    -
    -
    -
    yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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