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STD16N60M2

STMicroelectronics STD16N60M2

Part Number:
STD16N60M2
Manufacturer:
STMicroelectronics
Ventron No:
3070251-STD16N60M2
Description:
MOSFET N-CH 600V 12A DPAK
ECAD Model:
Datasheet:
STD16N60M2

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Specifications
STMicroelectronics STD16N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD16N60M2.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Operating Temperature
    150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    MDmesh™ M2
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STD16
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    10.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    320m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Turn-Off Delay Time
    58 ns
  • Continuous Drain Current (ID)
    12A
  • Gate to Source Voltage (Vgs)
    25V
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • RoHS Status
    ROHS3 Compliant
Description
STD16N60M2    Description
The device is an N-channel power MOSFET developed by MDesh M2 technology. Because of its strip layout and improved vertical structure, the device shows low on-resistance and optimized switching characteristics, making it suitable for the most demanding high-efficiency converters.
STD16N60M2     Features   ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100% avalanche tested ? Zener-protected
STD16N60M2      Applications
? Switching applications
STD16N60M2 More Descriptions
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 600 V 320 mOhm SMT MDMesh Power Mosfet - DPAK
MOSFET, N-CH, 600V, 12A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:600V; On Resistance
MOSFET, N-CH, 600V, 12A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Product Comparison
The three parts on the right have similar specifications to STD16N60M2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Rise Time
    Fall Time (Typ)
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Radiation Hardening
    Lead Free
    Contact Plating
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    REACH SVHC
    View Compare
  • STD16N60M2
    STD16N60M2
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    150°C TJ
    Cut Tape (CT)
    MDmesh™ M2
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STD16
    110W Tc
    Single
    10.5 ns
    N-Channel
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    600V
    10V
    ±25V
    58 ns
    12A
    25V
    2.4mm
    6.6mm
    6.2mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD15P6F6AG
    STD15P6F6AG
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, STripFET™ F6
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STD15
    35W Tc
    -
    -
    P-Channel
    160m Ω @ 5A, 10V
    4V @ 250μA
    340pF @ 48V
    10A Tc
    6.4nC @ 10V
    60V
    10V
    ±20V
    -
    10A
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STD16N60M2 vs STD15P6F6AG
  • STD12NM50ND
    STD12NM50ND
    STMicroelectronics
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    150°C TJ
    Tape & Reel (TR)
    FDmesh™ II
    Obsolete
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD12
    100W Tc
    -
    12 ns
    N-Channel
    380m Ω @ 5.5A, 10V
    5V @ 250μA
    850pF @ 50V
    11A Tc
    30nC @ 10V
    500V
    10V
    ±25V
    40 ns
    11A
    25V
    -
    -
    -
    ROHS3 Compliant
    SILICON
    e3
    2
    Matte Tin (Sn) - annealed
    SINGLE
    GULL WING
    3
    R-PSSO-G2
    1
    SINGLE
    ENHANCEMENT MODE
    100W
    DRAIN
    SWITCHING
    15ns
    17 ns
    TO-252AA
    44A
    500V
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    STD16N60M2 vs STD12NM50ND
  • STD1NK60-1
    STD1NK60-1
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Surface Mount, Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -55°C~150°C TJ
    Tube
    SuperMESH™
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD1NK
    30W Tc
    Single
    6.5 ns
    N-Channel
    8.5 Ω @ 500mA, 10V
    3.7V @ 250μA
    156pF @ 25V
    1A Tc
    10nC @ 10V
    -
    10V
    ±30V
    19 ns
    1A
    30V
    2.4mm
    6.6mm
    6.2mm
    ROHS3 Compliant
    SILICON
    e3
    3
    -
    -
    -
    3
    -
    1
    -
    ENHANCEMENT MODE
    30W
    -
    SWITCHING
    5ns
    25 ns
    -
    4A
    -
    No
    Lead Free
    Tin
    3V
    1A
    600V
    25 mJ
    No SVHC
    STD16N60M2 vs STD1NK60-1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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