STMicroelectronics STD150NH02L-1
- Part Number:
- STD150NH02L-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3586541-STD150NH02L-1
- Description:
- MOSFET N-CH 24V 150A IPAK
- Datasheet:
- STD150NH02L(-1)
STMicroelectronics STD150NH02L-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD150NH02L-1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ III
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD15
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4450pF @ 15V
- Current - Continuous Drain (Id) @ 25°C150A Tc
- Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
- Rise Time224ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time69 ns
- Continuous Drain Current (ID)150A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage24V
- Pulsed Drain Current-Max (IDM)600A
- Avalanche Energy Rating (Eas)500 mJ
- RoHS StatusROHS3 Compliant
STD150NH02L-1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4450pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 24V and VGS=24V, so the drain-source breakdown voltage is 24V in this case.It is [69 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 600A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
STD150NH02L-1 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 69 ns
based on its rated peak drain current 600A.
STD150NH02L-1 Applications
There are a lot of STMicroelectronics
STD150NH02L-1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4450pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 24V and VGS=24V, so the drain-source breakdown voltage is 24V in this case.It is [69 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 600A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
STD150NH02L-1 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 69 ns
based on its rated peak drain current 600A.
STD150NH02L-1 Applications
There are a lot of STMicroelectronics
STD150NH02L-1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STD150NH02L-1 More Descriptions
N-CHANNEL 24V - 0.0035 OHM - 150A IPAK STripFET III MOSFET FOR DC-DC CONVERSION
MOSFET N-Ch, 24V-0.003ohms 150A
Power Field-Effect Transistor, 150A I(D), 24V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET N-Ch, 24V-0.003ohms 150A
Power Field-Effect Transistor, 150A I(D), 24V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
The three parts on the right have similar specifications to STD150NH02L-1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeResistanceTerminal FormTurn On Delay TimeDrain to Source Voltage (Vdss)HeightLengthWidthRadiation HardeningLead FreeContact PlatingJESD-30 CodeNumber of ChannelsPbfree CodeVoltage - Rated DCCurrent RatingView Compare
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STD150NH02L-1Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON-55°C~175°C TJTubeSTripFET™ IIIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)260not_compliant30STD153Not Qualified1125W TcSingleENHANCEMENT MODE125WDRAINN-ChannelSWITCHING3.5m Ω @ 75A, 10V1.8V @ 250μA4450pF @ 15V150A Tc93nC @ 10V224ns5V 10V±20V40 ns69 ns150A20V24V600A500 mJROHS3 Compliant------------------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-632SILICON-55°C~150°C TJCut Tape (CT)MDmesh™ II Plus-Active1 (Unlimited)2EAR99---MOSFET (Metal Oxide)---STD13--1110W TcSingleENHANCEMENT MODE110WDRAINN-ChannelSWITCHING380m Ω @ 5.5A, 10V4V @ 250μA580pF @ 100V11A Tc17nC @ 10V10ns10V±25V9.5 ns41 ns11A25V650V44A-ROHS3 CompliantACTIVE (Last Updated: 8 months ago)16 Weeks380mOhmGULL WING11 ns600V2.4mm6.6mm6.2mmNoLead Free------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)MDmesh™ II Plus-Active1 (Unlimited)2EAR99---MOSFET (Metal Oxide)---STD10--185W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING600m Ω @ 3A, 10V4V @ 250μA400pF @ 100V7.5A Tc13.5nC @ 10V8ns10V±25V13.2 ns32.5 ns7.5A25V600V--ROHS3 Compliant-16 Weeks600mOhmGULL WING8.8 ns-2.4mm6.6mm6.2mmNoLead FreeTinR-PSSO-G21---
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Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON175°C TJTubeSTripFET™ IIe3Obsolete1 (Unlimited)3EAR99Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)260-30STD103-140W TcSingleENHANCEMENT MODE40WDRAINP-ChannelSWITCHING200m Ω @ 5A, 10V4V @ 250μA850pF @ 25V10A Tc21nC @ 10V40ns10V±20V10 ns40 ns10A20V-60V40A-ROHS3 Compliant--200mOhm-20 ns60V6.2mm6.6mm2.4mmNoLead Free---yes-60V-10A
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