STMicroelectronics STD14NM50N

Name: STD14NM50N
Brand: STMicroelectronics
SKU: 2482268-STD14NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD14NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 2482268-STD14NM50N

Description:: MOSFET N-CH 500V 12A DPAK

ECAD Model:

Datasheet:: STB14NM50N

Specifications

STMicroelectronics STD14NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD14NM50N.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
320mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Base Part Number
STD14
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Case Connection
DRAIN
Turn On Delay Time
10.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
320m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
816pF @ 50V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
48A
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD14NM50N Description
STD14NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STD14NM50N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
Designed for automotive applications and AEC-Q101 qualified

STD14NM50N Applications
Enterprise systems
Personal electronics
Switching applications
Communications equipment

STD14NM50N More Descriptions

Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package
Single N-Channel 500 V 0.32 Ohm 27 nC 90 W Silicon SMT Mosfet - TO-252-3
Trans MOSFET N-CH 500V 12A Automotive 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 500V, 12A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STD14NM50N.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Configuration

Drain to Source Voltage (Vdss)

JEDEC-95 Code

DS Breakdown Voltage-Min

Factory Lead Time

Contact Plating

Drain Current-Max (Abs) (ID)

View Compare
STD14NM50N

STMicroelectronics

NRND (Last Updated: 8 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Cut Tape (CT)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

320mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

STD14

3

R-PSSO-G2

1

90W Tc

Dual

ENHANCEMENT MODE

90W

DRAIN

10.2 ns

N-Channel

SWITCHING

320m Ω @ 6A, 10V

4V @ 100μA

816pF @ 50V

12A Tc

27nC @ 10V

9ns

10V

±25V

32 ns

42 ns

12A

3V

25V

500V

48A

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD11NM60N

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

STD11

3

R-PSSO-G2

1

90W Tc

Single

ENHANCEMENT MODE

90W

-

-

N-Channel

SWITCHING

450m Ω @ 5A, 10V

4V @ 250μA

850pF @ 50V

10A Tc

31nC @ 10V

18.5ns

10V

±25V

12 ns

50 ns

10A

-

25V

600V

40A

-

-

-

-

-

ROHS3 Compliant

Lead Free

600V

not_compliant

10A

30

Not Qualified

0.45Ohm

200 mJ

-

-

-

-

-

-

-

STD14NM50N vs STD11NM60N
STD12NM50ND

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

STD12

3

R-PSSO-G2

1

100W Tc

-

ENHANCEMENT MODE

100W

DRAIN

12 ns

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

5V @ 250μA

850pF @ 50V

11A Tc

30nC @ 10V

15ns

10V

±25V

17 ns

40 ns

11A

-

25V

-

44A

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

30

-

-

-

SINGLE

500V

TO-252AA

500V

-

-

-

STD14NM50N vs STD12NM50ND
STD1NK60-1

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount, Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

260

STD1NK

3

-

1

30W Tc

Single

ENHANCEMENT MODE

30W

-

6.5 ns

N-Channel

SWITCHING

8.5 Ω @ 500mA, 10V

3.7V @ 250μA

156pF @ 25V

1A Tc

10nC @ 10V

5ns

10V

±30V

25 ns

19 ns

1A

3V

30V

600V

4A

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

30

-

-

25 mJ

-

-

-

-

12 Weeks

Tin

1A

STD14NM50N vs STD1NK60-1