STMicroelectronics STD12NF06LT4

Name: STD12NF06LT4
Brand: STMicroelectronics
SKU: 2848496-STD12NF06LT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD12NF06LT4

Manufacturer:: STMicroelectronics

Ventron No:: 2848496-STD12NF06LT4

Description:: MOSFET N-CH 60V 12A DPAK

ECAD Model:

Datasheet:: STD12NF06LT4

Specifications

STMicroelectronics STD12NF06LT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD12NF06LT4.

Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
100mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
12A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD12
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
42.8W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
48A
Dual Supply Voltage
60V
Nominal Vgs
2 V
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD12NF06LT4 Description
The STD12NF06LT4 Power MOSFET was created with STMicroelectronics' proprietary STripFET? technology, which is specifically engineered to reduce input capacitance and gate charge.

STD12NF06LT4 Features
Exceptional dv/dt capability
Low gate charge

STD12NF06LT4 Applications
Switching applications

STD12NF06LT4 More Descriptions

Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a DPAK package
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:60V; On Resistance Rds(on):0.08ohm;
Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N REEL 2500; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: D-PAK; Current Id Max: 12A; Operating Temperature Min: -55°C; Pulse Current Idm: 48A; Reel Quantity: 2500; SMD Marking: STD12NF06L; Tape Width: 16mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 2V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V

Product Comparison

The three parts on the right have similar specifications to STD12NF06LT4.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Finish

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Factory Lead Time

Number of Channels

Lifecycle Status

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
STD12NF06LT4

STMicroelectronics

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

4.535924g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Obsolete

1 (Unlimited)

2

SMD/SMT

EAR99

100mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

260

12A

30

STD12

3

R-PSSO-G2

1

42.8W Tc

Single

ENHANCEMENT MODE

30W

DRAIN

10 ns

N-Channel

SWITCHING

100m Ω @ 6A, 10V

2V @ 250μA

350pF @ 25V

12A Tc

10nC @ 5V

35ns

5V 10V

±16V

13 ns

20 ns

12A

3V

16V

60V

48A

60V

2 V

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STD110NH02LT4

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

-

EAR99

-

FET General Purpose Power

24V

MOSFET (Metal Oxide)

GULL WING

260

80A

30

STD11

3

R-PSSO-G2

1

125W Tc

Single

ENHANCEMENT MODE

125W

DRAIN

-

N-Channel

SWITCHING

5m Ω @ 40A, 10V

1V @ 250μA

4450pF @ 15V

80A Tc

93nC @ 10V

224ns

5V 10V

±20V

40 ns

69 ns

80A

-

20V

24V

320A

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

yes

Matte Tin (Sn)

not_compliant

Not Qualified

0.005Ohm

900 mJ

-

-

-

-

-

STD12NF06LT4 vs STD110NH02LT4
STD10N60M2

STMicroelectronics

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ II Plus

-

Active

1 (Unlimited)

2

-

EAR99

600mOhm

-

-

MOSFET (Metal Oxide)

GULL WING

-

-

-

STD10

-

R-PSSO-G2

1

85W Tc

Single

ENHANCEMENT MODE

-

DRAIN

8.8 ns

N-Channel

SWITCHING

600m Ω @ 3A, 10V

4V @ 250μA

400pF @ 100V

7.5A Tc

13.5nC @ 10V

8ns

10V

±25V

13.2 ns

32.5 ns

7.5A

-

25V

600V

-

-

-

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

16 Weeks

1

-

-

-

STD12NF06LT4 vs STD10N60M2
STD15N65M5

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ V

-

Active

1 (Unlimited)

2

-

EAR99

340mOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

-

-

STD15

-

R-PSSO-G2

1

85W Tc

Single

ENHANCEMENT MODE

-

DRAIN

30 ns

N-Channel

SWITCHING

340m Ω @ 5.5A, 10V

5V @ 250μA

816pF @ 100V

11A Tc

22nC @ 10V

8ns

10V

±25V

11 ns

30 ns

11A

-

25V

-

44A

-

-

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

160 mJ

17 Weeks

-

ACTIVE (Last Updated: 7 months ago)

650V

650V

STD12NF06LT4 vs STD15N65M5