STMicroelectronics STD10P6F6

Name: STD10P6F6
Brand: STMicroelectronics
SKU: 2477922-STD10P6F6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD10P6F6

Manufacturer:: STMicroelectronics

Ventron No:: 2477922-STD10P6F6

Description:: MOSFET P CH 60V 10A DPAK

ECAD Model:

Datasheet:: STD10P6F6

Specifications

STMicroelectronics STD10P6F6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD10P6F6.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Series
DeepGATE™, STripFET™ VI
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
180MOhm
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STD10
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
35W
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 48V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
6.4nC @ 10V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
16.5 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
80 mJ
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD10P6F6 Description
The STD10P6F6 is a P-channel -60 V, 0.13 ? typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages. These are P-channel Power MOSFETs made with a novel trench gate structure and the STripFET? F6 technology. In all packages, the resulting Power MOSFETs have extremely low RDS(on).

STD10P6F6 Features
High avalanche ruggedness
Low gate drive power loss
Very low on-resistance
Very low gate charge
60V, 10A P-channel STripFET? F6 Power MOSFET in 3 pin DPAK package
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Suitable for switching applications

STD10P6F6 Applications
Switching applications
Small motor control.
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications

STD10P6F6 More Descriptions

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package
STD10P6F6 Series 60 V 180 mOhm P-Channel STripFET VI DeepGATE Mosfet -TO-252
MOSFET, P-CH, -60V, -10A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Source Voltage Vds:-60V; On Resistance
Power Field-Effect Transistor, 10A I(D), 60V, 0.116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -60V, -10A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: DeepGATE STripFET VI Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STD10P6F6.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Technology

Terminal Form

Base Part Number

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Pbfree Code

Terminal Finish

Subcategory

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Turn On Delay Time

Drain to Source Voltage (Vdss)

Height

Length

Width

Factory Lead Time

DS Breakdown Voltage-Min

Terminal Position

Configuration

JEDEC-95 Code

View Compare
STD10P6F6

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

175°C TJ

Tape & Reel (TR)

DeepGATE™, STripFET™ VI

Active

1 (Unlimited)

2

EAR99

180MOhm

MOSFET (Metal Oxide)

GULL WING

STD10

R-PSSO-G2

1

35W Tc

Single

ENHANCEMENT MODE

35W

DRAIN

P-Channel

SWITCHING

160m Ω @ 5A, 10V

4V @ 250μA

340pF @ 48V

10A Tc

6.4nC @ 10V

7ns

10V

±20V

10 ns

16.5 ns

10A

-4V

20V

60V

40A

80 mJ

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD10PF06-1

STMicroelectronics

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

175°C TJ

Tube

STripFET™ II

Obsolete

1 (Unlimited)

3

EAR99

200mOhm

MOSFET (Metal Oxide)

-

STD10

-

1

40W Tc

Single

ENHANCEMENT MODE

40W

DRAIN

P-Channel

SWITCHING

200m Ω @ 5A, 10V

4V @ 250μA

850pF @ 25V

10A Tc

21nC @ 10V

40ns

10V

±20V

10 ns

40 ns

10A

-

20V

-60V

40A

-

-

No

ROHS3 Compliant

Lead Free

e3

yes

Tin (Sn)

Other Transistors

-60V

260

-10A

30

3

20 ns

60V

6.2mm

6.6mm

2.4mm

-

-

-

-

-

STD10P6F6 vs STD10PF06-1
STD15N65M5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ V

Active

1 (Unlimited)

2

EAR99

340mOhm

MOSFET (Metal Oxide)

GULL WING

STD15

R-PSSO-G2

1

85W Tc

Single

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

340m Ω @ 5.5A, 10V

5V @ 250μA

816pF @ 100V

11A Tc

22nC @ 10V

8ns

10V

±25V

11 ns

30 ns

11A

-

25V

-

44A

160 mJ

-

No

ROHS3 Compliant

Lead Free

-

-

-

FET General Purpose Power

-

-

-

-

-

30 ns

650V

2.4mm

6.6mm

6.2mm

17 Weeks

650V

-

-

-

STD10P6F6 vs STD15N65M5
STD12NM50ND

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

Obsolete

1 (Unlimited)

2

EAR99

-

MOSFET (Metal Oxide)

GULL WING

STD12

R-PSSO-G2

1

100W Tc

-

ENHANCEMENT MODE

100W

DRAIN

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

5V @ 250μA

850pF @ 50V

11A Tc

30nC @ 10V

15ns

10V

±25V

17 ns

40 ns

11A

-

25V

-

44A

-

-

No

ROHS3 Compliant

Lead Free

e3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

-

260

-

30

3

12 ns

500V

-

-

-

-

500V

SINGLE

SINGLE

TO-252AA

STD10P6F6 vs STD12NM50ND